This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000   n m . Doping is shown to increase the gain by one order. Then, TlBr QD semiconductor optical amplifier (SOA) characteristics are studied. High dB gain is shown mainly at the doped structure, which can be used in various inline applications.

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The present paper introduces a numerical simulation results of the study from semiconductor quantum dot laser via the solution of fourequations model that describe temporal variations of carrier numbers in the wetting layer, , in the two-fold degenerate ground state, , and in the four-fold degenerate excited state,, and the number of photons, S, emitted from the GS. Varieties of dynamics have been seen to occur as a result of the variation of the parameters that appeare in the above mentioned model.