In this paper, a theoretical model for a quantum dot semiconductor optical amplifier (QDSOA) is proposed. The dynamics of carriers in ground, excited, and continuum states and wetting layer are considered in this model. The effects of the second excited state (ES2) inclusion are investigated for the first time, to the best of our knowledge, in the proposed QDSOA model. Moreover, the inhomogeneous broadening effect due to size distribution of dots, and the homogeneous broadening effect of a single dot in the gain spectrum by grouping of dots based on their optical resonant frequency, are included in the model. Furthermore, grouping of photon modes is considered in the model. It is shown that improvement of QDSOA performance is possible by considering ES2 in rate equations. Gain saturation in different injection currents is obtained for various square-shaped pulse train bit-rates. It is shown that carriers' relaxation time plays an important role in signal amplification and processing of QDSOA. The results illustrate that QDSOA can be used for high bit-rate signal processing devices (up to 450 Gbps) with negligible wave distortion and fast gain recovery.
In this paper, simulation of InAs/GaAs quantum dot (QD) laser is performed based upon a set of eight rate equations for the carriers and photons in five energy states. Carrier dynamics in these lasers were under analysis and the rate equations are solved using 4th order Runge-Kutta method. We have shown that by increasing injected current to the active medium of laser, switching-on and stability time of the system would decrease and power peak and stationary power will be increased. Also, emission in any state will start when the lower state is saturated and remain steady. The results including P-I characteristic curve for the ground state (GS), first excited state (ES1), second excited state (ES2) and output power of the QD laser will be presented.
In this paper, a theoretical model is proposed to investigate and analyze an ultra-fast cross gain modulation (XGM) in quantum dot semiconductor optical amplifiers (QDSOAs). The proposed model is based on a set of carrier’s rate equations, propagation equations for pump and probe signals and phase equations. To investigate the XGM mechanism, nonreturn-to-zero (NRZ) pulse trains with various bitrates are supposed to propagate as the input pump signals through the QDSOA’s active layer. The probe signal is assumed to be a continuous wave (CW) signal. Furthermore, optical gain of quantum dots (QDs) is calculated using a density matrix approach. For the first time, to the best of our knowledge, a second excited state is considered in the band diagram of QDs, to obtain the ultra-fast XGM in QDSOAs. Therefore, in the presented model, the rate equations are written for the carriers in the ground state, first and second excited states (ES2), continuum state and the wetting layer. In the presence of ES2, gain recovery time and gain saturation is reduced and, therefore, ultra-high bitrate pulse trains can be modulated with negligible pattern effects and wave distortion. The effect of the injection current density increment and carrier’s relaxation lifetime decrement are illustrated to show the improvement in the XGM mechanism in the QDSOA. It is shown theoretically that ultra-high bitrate XGM up to 450 Gbps is possible due to the reduced gain recovery time in the presence of ES2. It is demonstrated that at the same pump power for higher injection current densities and lower carrier relaxation lifetimes, the pattern effect and wave distortion has almost vanished. Although, in this case, the extinction ratio (ER) is decreased. It is shown that to recover the ER, the input pump power should be increased. Furthermore, based on the results in the presence of ES2, the ER is decreased by 0.5 dB.
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