1996
DOI: 10.1063/1.362692
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Simulating device size effects on magnetization pinning mechanisms in spin valves

Abstract: The effects of magnetostatic interactions on the giant magnetoresistive ͑GMR͒ response of NiFe/ Cu/NiFe spin valves are studied using an analytical model. The model is applicable to devices small enough for the magnetic layers to exhibit single-domain behavior. Devices having lengths in the track-width direction of 10 m and interlayer separations of 4.5 nm are studied. Stripe heights are varied from 0.5 to 2 m. The magnetization of one magnetic layer is pinned by a transverse pinning field that is varied from … Show more

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Cited by 10 publications
(4 citation statements)
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“…The self-demagnetization of the magnetic layers and interlayer magnetostatic interactions prevents the devices from being perfectly pinned and from being ideally biased [2]. Also indicated on the solid curve of Fig.…”
Section: Slmljlationmentioning
confidence: 98%
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“…The self-demagnetization of the magnetic layers and interlayer magnetostatic interactions prevents the devices from being perfectly pinned and from being ideally biased [2]. Also indicated on the solid curve of Fig.…”
Section: Slmljlationmentioning
confidence: 98%
“…The biasing deteriorates as tp increases, because both the selfdemagnetization of *the pinned layer and interlayer magnetostatic coupling increases. The increased selfdemagnetization results in the canting, at H = 0, of the magnetization of the pinned layer away from its intended direction [2]. Biasing is very poor for the devices of Fig.…”
Section: Slmljlationmentioning
confidence: 98%
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“…Si is a basic material for micro machining technique and used for many micro applications [1][2][3][4][5][6][7][8]. Nevertheless its high brittle property limits its use for large deformation.…”
mentioning
confidence: 99%