Simulated radiation effects in the superinsulating phase of titanium nitride films

Abstract

This paper investigates possible effects of alpha particle and ion beam irradiation on the properties of the superinsulating phase, recently observed in titanium nitride films, by using numerical simulation of particle transport. Unique physical properties of the superinsulating state are considered by relying on a two-dimensional Josephson junction array as a model of material structure. It is suggested that radiation-induced change of the Josephson junction charging energy would not affect the current-voltage characteristics of the superinsulating film significantly. However, it is theorized that a relapse to an insulating state with thermally activated resistance is possible, due to radiation-induced disruption of the fine-tuned granular structure. The breaking of Cooper pairs caused by incident and displaced ions may also destroy the conditions for a superinsulating phase to exist. Finally, even the energy loss to phonons can influence the superinsulating state, by increasing the effective temperature of the phonon thermostat, thereby reestablishing means for an energy exchange that can support Cooper pair tunneling

Absorbed dose assessment in particle-beam irradiated metal-oxide and metal-nonmetal memristors

“…There has been no ticed a large number of metal at oms (Ti, Zr, Hf, Sr, Ga) dis place ments through out the ox ide. Pri mary dis placed metal and ox ygen at oms cause fur ther dis place ments that can produce a dis place ment tree [17,18]. Pri mary knock-on at oms with en ergy less than 2 keV re sult in iso lated defects.…”

Simulation-based calculations of the proton dose in phase change memory cells

“…In spite of these lim i ta tions, sev eral ex per i ments have been re ported at very low tem per a tures (15-40 K), val i dat ing the TRIM re sults [21]. Also, TRIM has been suc cess fully used for sim ula tions of ra di a tion ef fects in var i ous kinds of mem ory cells and com po nents [8][9][10]22].…”

“…Pre vi ous cal cu la tions of the pro ton dose and absorbed dose from ion beams in mem ory com po nents mostly used, have now a days shown that there are ir radi a tion con di tions and dose lev els for ev ery type of mem ory cell when ra di a tion-in duced changes of charac ter is tics and func tion al ity of these cells should be ex pected [8][9][10].…”

Calculations of Absorbed Dose in Heavy-Ion Irradiated Phase-Change Memory Cells

“…In the previous years it has been practice that simulations of radiation effects and assesment of dose ranges in which these effects are expected should be conducted before costly and time consuming component irradiations at accelerating facilities [6][7][8].…”