Simplified edge isolation of buried contact solar cells

Arumughan, J.; Pernau, T.; Hauser, Alexander; Melnyk, Igor

doi:10.1016/j.solmat.2004.06.018

Cited by 10 publications

(13 citation statements)

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“…The edge isolation was carried out after screep printing of acid barrier paste as a mask, by the reactive ion etching [14][15]. However, it can also be performed by wet etching [16][17] with HF, HNO 3 and CH 3 COOH acidic solution in the 1:3:1 volume ratio.…”

Section: Edge Isolation By Wet Chemical Etchingmentioning

confidence: 99%

Fabrication of Crystalline Silicon Solar Cell with Emitter Diffusion, SiNx Surface Passivation and Screen Printing of Electrode

Iftiquar¹,

Lee²,

Ju³

et al. 2012

Photodiodes - From Fundamentals to Applications

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Section: Edge Isolation By Wet Chemical Etchingmentioning

confidence: 99%

Fabrication of Crystalline Silicon Solar Cell with Emitter Diffusion, SiNx Surface Passivation and Screen Printing of Electrode

Iftiquar¹,

Lee²,

Ju³

et al. 2012

Photodiodes - From Fundamentals to Applications

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“…The PEI is a dry‐etch and low‐temperature process, carried out at 70–150 °C in a batch process by coin stacking and pressing up to 500 wafers [ 10 ] in a screw clamp. In this way, only the edges of the wafers are exposed to the highly reactive fluoride and oxide radicals, generated by a plasma source [ 11 ] from tetrafluoromethane (CF 4 ) or sulfur hexafluoride (SF 6 ), as well as oxygen, [ 12 ] as shown in Figure . In a process duration of 120–240 s, about 2–5 μm silicon is etched off the wafer edges.…”

Section: A Review Of Edge Isolation Processesmentioning

confidence: 99%

“…In a process duration of 120–240 s, about 2–5 μm silicon is etched off the wafer edges. [ 11 ] The PEI is usually performed directly after emitter diffusion, which allows passivation of the edges in subsequent surface passivation. [ 11 ] The resulting mechanical stress due to the stacking and clamping of wafers leads to an increased risk of wafer breakage, especially for decreasing wafer thicknesses.…”

Section: A Review Of Edge Isolation Processesmentioning

confidence: 99%

“…Additional benefits are a lower yield loss due to less handling compared with PEI and no losses in the active cell area compared with LEI. [11] The iCEI is typically realized on inline etching tools with multiple lanes on structured transport rollers. The wafers horizontally run through a series of wet-chemical etching baths with intermediate rinses and a final drying step, as shown in Figure 3a.…”

Section: Inline Acidic Wet Chemical Edge Isolation (Icei)mentioning

confidence: 99%

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Past, Present, and Future Outlook for Edge Isolation Processes in Highly Efficient Silicon Solar Cell Manufacturing

et al. 2022

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This work highlights present research and mass production results of wet‐chemical solutions for industrial edge isolation of silicon solar cells, aiming for a reduction of nitric acid consumption and production costs as well as a simultaneous increase in efficiency. All processes are applied to either industrially passivated emitter and rear contact (PERC) or tunnel oxide‐passivated contact (TOPCon) solar cells. Herein, a review of different edge isolation techniques in the history of silicon solar cell processing is presented. Subsequently, novel wet‐chemical approaches are focused on, namely 1) HNO3‐reduced edge isolation (InOxSide Fusion), 2) HNO3‐free edge isolation (InOxSide Blue), and 3) batch cluster solution—a combination of an acidic inline and an alkaline batch tool for emitter edge isolation of PERC and TOPCon solar cells. For each of the approaches, cell results and total cost of ownership estimations are presented. Based on all findings, a comprehensive discussion between inline versus batch‐cluster processing is presented. All investigations are performed on industrial equipment, wafer sizes, and a solar cell efficiency level of above 23%.

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“…Recently, reactive ion etching (RIE) [5][6][7][8][9][10], as a kind of dry plasma etching processes that has been successfully performed in edge isolation [11], receives lots of attention on account of its low cost and no contamination of chemical waste. In this paper, the focus is on a dry texturing process using mixed plasma gases of SF 6 /O 2 without the use of Cl 2 and metal-assisted process.…”

Section: Introductionmentioning

confidence: 99%

Improved Reflectance for Textured Mc-Silicon Solar Cells by SF₆/O₂ Plasma Etching

Tao

Zhou

Zhao³

et al. 2011

Integrated Ferroelectrics

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On account of enhancing surface light trapping by reducing reflectance, front surface texturiing is always a key to improve the solar cells performance. As a maskless plasma texturing technique, reactive ion etching using SF 6 /O 2 plasma brings down reflectance distinctly by fluorine ions etching the surface of mc-silicon solar cells with the assisting of O 2 . The textured surface with bowl-like nanostructure exhibits fine anti-reflectance effect. Optimal reflectance of mc-silicon solar cells could be obtained by adjusting gases flow ratios, plasma power and etching time.

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Simplified edge isolation of buried contact solar cells

Cited by 10 publications

References 0 publications

Fabrication of Crystalline Silicon Solar Cell with Emitter Diffusion, SiNx Surface Passivation and Screen Printing of Electrode

Fabrication of Crystalline Silicon Solar Cell with Emitter Diffusion, SiNx Surface Passivation and Screen Printing of Electrode

Past, Present, and Future Outlook for Edge Isolation Processes in Highly Efficient Silicon Solar Cell Manufacturing

Improved Reflectance for Textured Mc-Silicon Solar Cells by SF₆/O₂ Plasma Etching

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Simplified edge isolation of buried contact solar cells

Cited by 10 publications

References 0 publications

Fabrication of Crystalline Silicon Solar Cell with Emitter Diffusion, SiNx Surface Passivation and Screen Printing of Electrode

Fabrication of Crystalline Silicon Solar Cell with Emitter Diffusion, SiNx Surface Passivation and Screen Printing of Electrode

Past, Present, and Future Outlook for Edge Isolation Processes in Highly Efficient Silicon Solar Cell Manufacturing

Improved Reflectance for Textured Mc-Silicon Solar Cells by SF6/O2 Plasma Etching

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Product

Resources

About

Improved Reflectance for Textured Mc-Silicon Solar Cells by SF₆/O₂ Plasma Etching