Recombination of photo-generated charge carriers at metalsemiconductor junctions is a strong limiting factor in achieving high efficiencies for conventional c-Si solar cells [e.g., aluminum back scatter field, passivated emitter rear contact (PERC), etc.]. [1-3] This can be reduced by squeezing the metallized area fraction, but that results in an increase of fill-factor (FF) loses. A novel approach developed at Fraunhofer ISE, namely, tunnel oxide passivated contacts (TOPCon), attempts to counter this effect by implementing passivating contact structures to drastically reduce metal-semiconductor junction recombination. [1,2,4] Passivated contact layers, such as TOPCon, constitute an ultrathin (1-2 nm) silicon oxide (SiO x) layer grown over the bulk c-Si, which is further deposited upon with a highly doped poly-Si layer and finally capped with SiN x. Together they provide excellent passivation, enabling high implied open circuit voltage (iV oc) [2] and carrier selectivity. [2,4] Furthermore, the depletion zone field generated due to high doping of poly-Si also contributes to the passivation effect. Passivating contacts are, therefore, considered to be the next major technological upgrade in the solar cell technology. [3,4] However, forming metal contacts on TOPCon is still a challenge that requires further investigation and improvements. Some commonly reported concerns pertaining to the conventional screen-printed metallization on TOPCon are 1) higher specific contact resistivity (1.5-10 Ω cm) on thick (>150 nm) poly-Si passivated contacts [5] and 2) increase of metal-induced recombination with decreasing thickness of poly-Si due to the metal spiking through the poly-Si and coming in contact with the bulk c-Si. [6] Spiking of the metal paste through the poly-Si layer drastically increases the J 0,met (recombination current at metal-silicon junction) due to poor shielding of recombination at metal contacts, resulting in a low open circuit voltage (V oc). [6] To prevent the penetration of fire-through metal pastes all the way through to the c-Si substrate, it becomes necessary either to keep the thickness of poly-Si above 120 nm or use low temperature metallization techniques. [7-10] However, a thicker poly-Si layer has two serious drawbacks-increased parasitic absorption and higher cost of ownership (COO). Parasitic absorption inflates with increasing poly-Si thickness, resulting in the loss of short circuit current (J sc), [6,11,12] whereas the COO calculations reveal a jump of around 75% if the poly-Si thickness is increased from 50 to 200 nm. [13] Hence, to keep the parasitic absorption and the cost

In this paper we report on research activities at the Fraunhofer Institute for Solar Energy Systems (ISE) and Concentrix Solar in the area of secondary optics for FLATCON ® modules. This concentrator photovoltaic (CPV) technology is based on Fresnel-lenses as primary optics, passive heat spreaders and triple-junction III-V solar cells. In the first part of the paper, a field performance analysis is presented for Concentrix CPVsystems recently installed in Spain. Subsequently, the performance of the first FLATCON ® modules with reflective and refractive secondaries are evaluated (FLATCON ® II) in indoor and outdoor measurements. As a result of this development, the first module with automated assembly process of the secondary optics could be manufactured. The highest outdoor efficiency measured for this kind of module is 29.1 %, which is the highest module efficiency achieved at the Fraunhofer ISE so far.

The metallization of bifacial tunneling oxide and passivating contacts (TOPCon) solar cells without initial metal seed layer by electroplating of Ni/Cu/Ag is demonstrated. The presented approach allows a lead-free metallization with narrow contact geometries and low contact resistivity. A metal plate provides electrical contact to the silicon via micrometer size laser contact openings and allows electroplating of bifacial TOPCon solar cells using industrial type inline plating tools without the need of a previously applied seed layer. Challenges such as direct contacting of silicon and dissolution of contacts are identified, and potential solutions are discussed. An optimized process sequence is developed and with this approach a solar cell efficiency of 22.5% is demonstrated on industrial bifacial TOPCon solar cells reaching the same level as the screen-printed reference solar cells. Index Terms-Forward bias plating (FBP), light induced plating (LIP), passivating contacts, silicon solar cells, tunneling oxide and passivating contacts (TOPCon). I. INTRODUCTION S OLAR cells featuring carrier selective contacts such as tunneling oxide and passivating contacts (TOPCon) consisting of a thin oxide layer and a highly doped poly-Si, which significantly reduces contact recombination have attracted an increased interest lately. Their potential was already shown on an n-type both sided contacts lab cell by Richter et al. [1] with 25.8% efficiency [2] and single-sided contacted IBC lab cell by Haase et al. [3] with 26.1% both on 4 cm² sample size. The industrial implementation referred as i-TOPCon featuring a boron emitter passivated by AlO x/ SiN x on the front side and Manuscript

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