Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diode

The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes

“…During recent years, application of the surface and interface science techniques has shown clearly that interfaces formed between metals and semiconductors are complex regions whose physical properties depend on the preparation conditions of the surface, because in many cases contact metals are deposited onto surfaces covered by unknown contaminants, which may cause the interface states and which can affect the mechanical and electrical properties of the contact, performance, reliability, and stability of MS devices. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] There are a number of techniques that are useful in determining the interface states. The surface states can be viewed as electronic states generated by unsaturated dangling bonds of the surface atoms.…”

“…Therefore, the interface states and interfacial-oxide layer at the MS-rectifying contact play an important role in the determination of the Schottky barrier height and other characteristic parameters of the devices. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Cowley and Sze 3 have developed a technique to determine the interface-states density on the basis of the barrierheight data obtained from an analysis of the barrier height with different metallization as a function of the metal work function. [1][2][3][4][5][6][7][8] In the laboratory environment, crystal surfaces are usually covered with layers of native oxides and organic contaminants.…”

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

“…-V graph shows a straight in extensive voltage interval and the diffusion potential which is given in Table 2 is attained with extrapolation of straight lines to the voltage axis. It is known that intercept and slope voltage of the C -2 -V plot is dependent on the density of interface states and interface insulator sheet (Sztkowski and Sieranski, 1992). The C -2 -V graphs point out that the ac signal could not been follow by interface states and inversion layer charge in the depletion region, particularly in the accumulation and strong inversion .…”

The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures

“…The MIS structures have been intensively investigated due to their technological applications (Rhoderick and Williams, 1988;Nicollian and Brews, 1982;Quennoughı, 1997;Depas et al, 1992;Konofaos et al, 1997;Haddara and El-Sayed, 1988;Singh, 1985;Cova and Singh, 1997;Sands et al, 1992;Card and Rhoderick, 1971). In the presence of an insulator layer, the density of interface states (N ss ) and series resistance (R s ), the I-V, C-V and G/o-V characteristics deviate from those expected for ideal behavior of Schottky diodes Cova and Singh, 1997;Sands et al, 1992;Card and Rhoderick, 1971;Türüt and Saglam, 1992;Gökc -en et al, 2008;Szatkowski and Sieranski, 1992).…”

“…To form the Schottky contacts, the circular dots of $1 mm diameter and $2000Å thick Al are deposited onto the oxidized surface of the wafer through a metal shadow mask in a liquid nitrogen trapped vacuum system in a vacuum of $ 2 Â 10 À 6 Torr. The interfacial insulator layer thickness was estimated to be about 40Å from high frequency (1 MHz) measurement of the interface insulator capacitance in the strong accumulation region for MIS Schottky diode (Szatkowski and Sieranski, 1992).…”