The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes

Ayyıldız, E.; Lu, Chi-Pei; Türüt, A.

doi:10.1007/s11664-002-0157-9

Cited by 52 publications

(23 citation statements)

References 24 publications

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“…These results are more consistent with the results achieved by Victorovitch et al [29] and Ayyildiz et al [30]. Based on the explanation reported in references [29,30], the large differences between the interface state density values obtained from the C− f , The variation of interface state density (NSS) and relaxation time (τ ) as a function of EC − ESS for the Ir/Ru/n-InGaN SBD at room temperature. G− f and I−V characteristics may be due to the local trap-density effect at the oxide-semiconductor interface.…”

Section: Results and Dicussionsupporting

confidence: 91%

“…The traps are effectively concentrated across the current parts; I−V characteristics provide the determination of the local density of traps in the areas crossed by the current. Hence, the average density of traps determined from admittance measurements can be significantly lower than the local density [29,30] (by about three orders of magnitude). The other important parameter for the Schottky devices is series resistance (R S ).…”

Section: Results and Dicussionmentioning

confidence: 87%

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Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Padma

Reddy

2017

Физика И Техника Полупроводников

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Section: Results and Dicussionsupporting

confidence: 91%

Section: Results and Dicussionmentioning

confidence: 87%

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Padma

Reddy

2017

Физика И Техника Полупроводников

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“…However, its value decreases after gamma irradiation. This effect can be attributed to the decrease in the net ionized doping concentration, irradiation generates deep levels which trap conduction electrons and reduce the carrier concentration [26,28,29]. From Figure (3) the conductance decrease with increasing frequency due to capture and emission of carriers by interface states [13].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…The density of interface states (Nss) as a function of frequency was extracted from C-V-f and G/ω-V-f characteristics. From Hill and Coleman method [13,26,[27][28][29][30][31][32], the density of interface states (N ss ) is given by:…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

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(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

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“…The carrier mobility μ values of PANI and PANI/Nd 2 O 3 :Al 2 O 3 nanocomposites are found to be 4.27 × 10 À3 and 1.45 × 10 À2 , respectively, and this is a significant increment compare to reported data. [36,37] The number of charge carrier concentrations and the mobility of these carriers increase with the increase of both Nd 2 O 3 :Al 2 O 3 concentration and the applied voltage. These results suggest that tunneling or hopping mechanism in these devices may be equally important as in those involving thermionic emission process.…”

Section: Capacitance-voltage Characteristicsmentioning

confidence: 99%

Synthesis, characterization, dielectric and rectification properties of PANI/Nd₂O₃:Al₂O₃nanocomposites

Ansari¹,

Khasim

Parveen³

et al. 2016

Polym. Adv. Technol.

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nanocomposites were prepared by in situ oxidative polymerization method using different weight percentages of oxide powders. The prepared nanocomposites were characterized by Fourier transform infrared spectroscopy and X-ray diffraction for molecular and crystal structures. Scanning electron microscopy and transmission electron microscopy images show the tubular structure of polyaniline nanocomposite with embedded metal oxides. The electrical conductivity of the nanocomposites increases with increase in temperature as well as with concentration of Nd 2 O 3 :Al 2 O 3 particles in polyaniline. This is because of the hopping of charge polarons and extended chain length of the nanocomposites as evidenced by the negative thermal coefficient (NTC) characteristic. A high NTC value of 2.67 was found in nanocomposites with 15 wt% of oxide particles. These nanocomposites show low dielectric constant and dielectric loss; the electrical conductivity is higher than 0.3 S/cm as confirmed by Cole-Cole plot that indicates a decrease in both grain resistance and bulk resistance of the nanocomposites. The current-voltage and capacitance-voltage measurements were also carried out. The carrier mobility μ values of pure polyaniline and nanocomposites were found to be 4.27 × 10 À3 and 1.45 × 10 -2 H.M À1 , respectively. A significant enhancement in carrier mobility was observed in comparison with the literature.

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The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes

Cited by 52 publications

References 24 publications

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Synthesis, characterization, dielectric and rectification properties of PANI/Nd₂O₃:Al₂O₃nanocomposites

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The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes

Cited by 52 publications

References 24 publications

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Synthesis, characterization, dielectric and rectification properties of PANI/Nd2O3:Al2O3nanocomposites

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Synthesis, characterization, dielectric and rectification properties of PANI/Nd₂O₃:Al₂O₃nanocomposites