1999
DOI: 10.1109/6040.746536
|View full text |Cite
|
Sign up to set email alerts
|

Silver metallization for advanced interconnects

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
60
1
1

Year Published

2004
2004
2020
2020

Publication Types

Select...
5
4

Relationship

0
9

Authors

Journals

citations
Cited by 117 publications
(62 citation statements)
references
References 3 publications
0
60
1
1
Order By: Relevance
“…[1][2][3] In addition to the widely used copper, silver is an excellent choice in terms of electrical conductivity and residual stress. [3] The growth of silver thin films was investigated using several processes such as sputtering, [4] electron-beam evaporation, [5] molecular-beam epitaxy (MBE), [6] and metal-organic (MO)…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] In addition to the widely used copper, silver is an excellent choice in terms of electrical conductivity and residual stress. [3] The growth of silver thin films was investigated using several processes such as sputtering, [4] electron-beam evaporation, [5] molecular-beam epitaxy (MBE), [6] and metal-organic (MO)…”
Section: Introductionmentioning
confidence: 99%
“…[4] Silver has the highest electrical conductivity at room temperature, however its use in microelectronics is often limited by its diffusion into semiconducting substrates. [5] Thin films of silver have been deposited by many non-vacuum techniques including electrodeposition, [6] photochemical deposition, [7] electroless deposition, [8] and sol-gel. [9] Physical vapor deposition techniques include vacuum evaporation, [10] sputtering, [5,11,12] pulsed laser deposition, [13] electron beam evaporation, [14] and molecular beam epitaxy.…”
Section: Introductionmentioning
confidence: 99%
“…[5] Thin films of silver have been deposited by many non-vacuum techniques including electrodeposition, [6] photochemical deposition, [7] electroless deposition, [8] and sol-gel. [9] Physical vapor deposition techniques include vacuum evaporation, [10] sputtering, [5,11,12] pulsed laser deposition, [13] electron beam evaporation, [14] and molecular beam epitaxy. [15] Among these various techniques, CVD has the advantage of potentially superior step-coverage, and is a single-step process which can easily be scaled up to deposit high purity films over large areas.…”
Section: Introductionmentioning
confidence: 99%
“…While Cu has been introduced successfully in microprocessors by damascene electroplating, Ag has a high potential for a nextgeneration interconnect material in ultralarge-scale interconnects ͑ULSI͒ because it has the lowest resistivity 1 and superior resistance in electromigration. [2][3][4][5][6][7] Defect-free superfilling is essential for reliable metal interconnects in damascene electroplating and it is attained by the addition of a catalytic accelerator in the electrolyte.…”
mentioning
confidence: 99%