Silver chalcogenide based memristor devices

Abstract

Abstract-We have fabricated two-terminal chalcogenidebased devices containing Ge 2 Se 3 and Ag that function as memristors. These devices have been electrically characterized at room temperature using quasi-static DC methods, AC sinusoidal methods, and AC pulse testing methods. In all cases, the devices exhibit memristive behavior.

Behavioral Current-Voltage Model with Intermediate States for Unipolar Resistive Memories

“…Here Ag/Si mixture ratio can be changed to form an Ag-rich region or a Si-rich region thereby the conductivity of Ag/Si mixed layer can be variable [12,17]. In all the comparison with different materials and different processing technologies, the proposed behavioral model shows very good agreement with the measured data [12,[14][15][16][17]. In Fig.…”

“…To show that the proposed behavioral model can universally describe not only unipolar resistive memories but also bipolar ones, we compared the proposed model with various measured data that are obtained by different bipolar memories [12,[14][15][16][17] in Figs. 4(a)-(d).…”

“…For example, Fig. 4(a) compares the behavioral model with the silver chalcogenide based resistive memory that contains Ge 2 Se 3 and Ag [12,14]. Figs.…”

“…4. Comparison of the proposed behavioral model and various devices (a) The measured device is silver chalcogenide based bi-polar resistive memory that contains Ge 2 Se 3 and Ag [12,14], (b) The measured device is TiO 2 crossbar resistive memory with bi-polar hysteresis loops [12,15], (c) The measured device is another bi-polar TiO 2 memristive switching memory [12,16], (d) The measured device is made by cosputtering Ag and Si active layers, where Ag/Si mixture ratio can be changed to form a Ag-rich region or a Si-rich region [12,17]. Table 1.…”

RRAM based random bit generation for hardware security applications

“…This must guarantee a big enough current cut in the second RRAM such that it prevents from changing to LRS. An experimental validation of the proposed topology has been performed with chalcogenidebased memristors [25]- [26]. The details of the experiment are shown in Fig.…”