Nanoelectronics and Hardware Security

Rose, Garrett S.; Kudithipudi, Dhireesha; Khedkar, Ganesh; McDonald, Nathan; Wysocki, Bryant; Yan, Lok-Kwong

doi:10.1007/978-1-4614-7597-2_7

Cited by 5 publications

(1 citation statement)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Researchers and engineers have shifted their focus towards finding hardware-level solutions to address security-related challenges in recent times. The hardware-level solutions include the new nano-electronic devices, such as memristive devices or memristors, spintronics, or carbon nanotubes 4 . Explicitly, memristive devices are foreseen as promising candidates for future hardware security applications mainly because of their special properties, such as low power consumption, scalability to the nano grade, fast switching, large off/on ratio, good endurance and reliability 5 – 7 .…”

Section: Introductionmentioning

confidence: 99%

Physics inspired compact modelling of $$\hbox {BiFeO}_3$$ based memristors

Yarragolla

Hemke

et al. 2022

Sci Rep

View full text Add to dashboard Cite

With the advent of the Internet of Things, nanoelectronic devices or memristors have been the subject of significant interest for use as new hardware security primitives. Among the several available memristors, BiFe$$\mathrm{O}_{3}$$ O 3 (BFO)-based electroforming-free memristors have attracted considerable attention due to their excellent properties, such as long retention time, self-rectification, intrinsic stochasticity, and fast switching. They have been actively investigated for use in physical unclonable function (PUF) key storage modules, artificial synapses in neural networks, nonvolatile resistive switches, and reconfigurable logic applications. In this work, we present a physics-inspired 1D compact model of a BFO memristor to understand its implementation for such applications (mainly PUFs) and perform circuit simulations. The resistive switching based on electric field-driven vacancy migration and intrinsic stochastic behaviour of the BFO memristor are modelled using the cloud-in-a-cell scheme. The experimental current–voltage characteristics of the BFO memristor are successfully reproduced. The response of the BFO memristor to changes in electrical properties, environmental properties (such as temperature) and stress are analyzed and consistant with experimental results.

show abstract

Section: Introductionmentioning

confidence: 99%

Physics inspired compact modelling of $$\hbox {BiFeO}_3$$ based memristors

Yarragolla

Hemke

et al. 2022

Sci Rep

View full text Add to dashboard Cite

show abstract

A Reconfigurable Arbiter PUF Based on STT-MRAM

Ali

You

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

View full text Add to dashboard Cite

With the rapid development of the Internet of Things (IoT) infrastructure, electronic devices are becoming ubiquitous, in which authentication and secure communication are required. As a result, novel hardware security primitives have been developed to overcome the deficiencies of conventional security methods and address the growing security issues. Physical unclonable function (PUF) is an emerging hardware security primitive that plays an important role in authenticity and reliability of integrated circuits (ICs). Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a promising technology that is dense, fast, non-volatile, highly endurant and energy-efficient. STT-MRAM is considered a promising primitive as it has several intrinsic randomness sources, such as stochastic switching, process variations and statistical read/write failures. This paper proposes a novel hybrid STT-MRAM/complementary metal-oxide semiconductor (CMOS) based reconfigurable arbiter PUF. The functionality of the design is validated by a 28nm CMOS technology and a compact magnetic tunnel junction (MTJ) model. Simulation results show that the proposed PUF has a mean intra-hamming distance (HD) of 0.24%, a mean inter-HD of 51.1% and passes the National Institute of Standards and Technology (NIST) statistical tests.

show abstract