2021
DOI: 10.1016/j.solmat.2021.111128
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Silicon wafers for industrial n-type SHJ solar cells: Bulk quality requirements, large-scale availability and guidelines for future developments

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Cited by 14 publications
(21 citation statements)
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“…-The rise of the cell  without edge defect (+0.2%abs observed between =5.cm and 0.4.cm). These results are consistent with findings in [12] -…”
Section: Effects Of the C-si Bulk Resistivity On The Edge Lossessupporting
confidence: 94%
“…-The rise of the cell  without edge defect (+0.2%abs observed between =5.cm and 0.4.cm). These results are consistent with findings in [12] -…”
Section: Effects Of the C-si Bulk Resistivity On The Edge Lossessupporting
confidence: 94%
“…[ 7,26 ] Yet, studies on mass production of SHJ cells have found that FF and efficiency benefit from lower bulk resistivities when using commercial wafers in the range of 0.3–2.1 Ωcm. [ 7,27 ] According with these studies, solar cells with lower bulk resistivities are more resilient to lower bulk lifetimes and process‐induced defects.…”
Section: Resultsmentioning
confidence: 99%
“…[ 1,6 ] Under STC conditions, the effective bulk resistivity of a solar cell with excellent surface passivation and high bulk lifetime is driven less by the bulk doping than by the excess carrier concentration. [ 7,26 ] Instead, at lower illumination intensities, the generation of excess carriers decreases, and the bulk doping can limit the performance of the solar cell. In Figure we compare the output power density of SHJ solar cells manufactured with medium (3 Ωcm), high (75 Ωcm), and very‐high (>15 000 Ωcm) bulk resistivities for illumination intensities between 0.1 and 1 suns.…”
Section: Resultsmentioning
confidence: 99%
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