Silicon-to-silicon wafer bonding using evaporated glass

Weichel, S.; Reus, R. de; Lindahl, M.

doi:10.1016/s0924-4247(98)00130-7

Cited by 25 publications

(8 citation statements)

References 9 publications

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“…Weibull plots for the different samples have been produced and the data from these are summarized in table 1 for comparison purpose since Weibull statistics are very common in fracture measurements. A large span for the Weibull modulus of plasma-bonded wafers is also reported in [14] where it ranged from 2 to 10. A significance test known as the F-test has been performed to check the hypothesis that the variance of the data from different sizes of the pillars is significantly greater than the variance of the DCB reference test.…”

Section: Resultsmentioning

confidence: 74%

Method for measuring fracture toughness of wafer-bonded interfaces with high spatial resolution

Bring¹,

Sanz‐Velasco²,

Enoksson³

2006

J. Micromech. Microeng.

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A test method for adhesion quantification with high spatial resolution of bonded areas is presented. The method is based on a three-point bend chevron test and is applicable especially for small bonded structures. Using an ordinary surface profiler the method is suitable for determining the mode I fracture toughness, KIc, of bonded areas from 5 × 5 µm2 to 20 × 20 µm2 in size. The method is compared quantitatively to the double cantilever beam (DCB) test. Measurements show that the average KIc value determined using this method is in close accordance with KIc values measured using the DCB method but a larger spread is observed which may be dedicated to a real spatial variation of KIc shown by the higher spatial resolution of the presented method.

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Section: Resultsmentioning

confidence: 74%

Method for measuring fracture toughness of wafer-bonded interfaces with high spatial resolution

Bring¹,

Sanz‐Velasco²,

Enoksson³

2006

J. Micromech. Microeng.

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“…The microphone consists of the transducer chip and a backchamber chip bonded together using thin-film anodic bonding [28]. The size of the two-layer microphone is 3.0 × 3.0 × 0.7 mm 3 .…”

Section: Stacking Approach For An Integrated Microphonementioning

confidence: 99%

Multiple Through-wafer Interconnects for MEMS Applications

Heschel

Kuhmann²,

Bouwstra³

2001

Sensors Update

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This chapter reports on the design and manufacturing of multiple through-wafer interconnects for stacking of microelectromechanical devices. The feedthroughs have been applied to an interconnect (intermediate) layer for an integrated microphone. The integrated microphone consists of the transducer part and an application specific integrated circuit (ASIC). The two parts are joined by stacking them on top of each other with the interconnect (intermediate) layer between them. The intermediate layer is a multifunctional layer. It provides the microphone with an acoustic frontchamber. The intermediate layer ensures the interchange of acoustical and electrical signals with the environment. Also, the intermediate layer protects the microphone during dicing, chip handling and in operation. The two active components are electrically connected through the intermediate layer by multiple wafer frontside to backside interconnects. The feedthrough interconnects are provided with under bump metallizations (UBM), solder bumps and sealing rings on the microphone side and top surface metallizations (TSM) on the ASIC side. The entire metallization system is based on electroplating techniques. The patterning of the metallizations has been done utilizing an electrodepositable photoresist (EDPR) as a plating mold. Several EDPR processes have been developed which are optimized for the respective metallization. The feedthrough interconnects have been optimized in terms of series resistance and parallel capacitance. Electrical characterization of the feedthrough interconnects has been carried out analytically and experimentally. The series resistance of one single interconnect wire is in the order of 100 mX. The parallel (parasitic) capacitance is in the order of 2 pF. Coupling between two adjacent feedthrough interconnects is negligible for low relative humidity (<50%). For high relative humidity (>90%) the impedance between two wires may be reduced due to a condensed water film. Sensitivity measurements performed before and after bonding of the interconnect layer to the microphone showed identical results which proves sufficient (TX) isolation between the feedthrough wires.

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“…However, limited by the physical properties of organic materials, the long-term stability may be its fatal defect. Compared with the above methods, anodic bonding [12][13][14][15] is an alternative method to develop capacitive pressure sensor with good stability. But it is also facing the challenge of fabricating the connection wires.…”

Section: Introductionmentioning

confidence: 99%