Silicon Sacrificial Layer Technology for the Production of 3D MEMS (EPyC Process)

Louriki, Latifa; Staffeld, Peter; Kaelberer, Arnd; Otto, Thomas

doi:10.3390/proceedings1040295

Cited by 2 publications

(1 citation statement)

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“…High volumes combined with tiny buried channels had to be fully released. Therefore we used an optimized dry etching process using SF6 plasma and XeF2 gas [6] providing a very moderate etch time of only 15 min. Gaseous HF was used to clean the surface SiO2 layer off the final comb structure.…”

Section: Vertical Comb Drive Realized By Epyc Processmentioning

confidence: 99%

Multilayer Micromechanics Process with Thick Functional Layers (EPyC40)

Louriki

Staffeld

Kaelberer

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Abstract:The EPyC process (Epi-Poly-Cycle) (by Robert Bosch GmbH) opens up unique opportunities for manufacturing complex 3D MEMS structures having high effectiveness in small space. EPyC40 is an EPyC process with up to 40 μm thick polysilicon layers and sacrificial silicon technique. For successful manufacturing a 40 μm EPyC the epitaxial polysilicon layer must be electrically and mechanically optimized. A vertical deep trench patterns the functional and sacrificial areas. A passivation must be deposited homogeneously and has to be tight and robust towards silicon-etching gases. For more than one cycle it is necessary to tailor the layer stress of the epitaxial polysilicon and the wafer-bow. The full process for stacking up 5 EPyC cycles with two 40 μm epitaxial polysilicon layers was investigated in detail. A true 3D MEMS device providing high z deflection by use of a vertical comb drive with 40 μm electrodes was built up successfully to prove the feasibility of the EPyC process.

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Section: Vertical Comb Drive Realized By Epyc Processmentioning

confidence: 99%