Abstract:The EPyC process uses silicon sacrificial layer technology, which makes it possible to generate high volume sacrificial structures of up to 100 microns thickness. The biggest challenge is the rapid and complete removal of the 3D sacrificial structure at the end of the process. This paper examines and compares in detail two silicon dry etching methods to optimize a new silicon etching process for successful EPyC manufacturing.
Abstract:The EPyC process (Epi-Poly-Cycle) (by Robert Bosch GmbH) opens up unique opportunities for manufacturing complex 3D MEMS structures having high effectiveness in small space. EPyC40 is an EPyC process with up to 40 μm thick polysilicon layers and sacrificial silicon technique. For successful manufacturing a 40 μm EPyC the epitaxial polysilicon layer must be electrically and mechanically optimized. A vertical deep trench patterns the functional and sacrificial areas. A passivation must be deposited homogeneously and has to be tight and robust towards silicon-etching gases. For more than one cycle it is necessary to tailor the layer stress of the epitaxial polysilicon and the wafer-bow. The full process for stacking up 5 EPyC cycles with two 40 μm epitaxial polysilicon layers was investigated in detail. A true 3D MEMS device providing high z deflection by use of a vertical comb drive with 40 μm electrodes was built up successfully to prove the feasibility of the EPyC process.
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