Silicon pressure sensor with frequency output

Schörner, Reinhold; Poppinger, M.; Eibl, J.

doi:10.1016/0924-4247(90)85015-v

Cited by 19 publications

(6 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While the strain-dependent resistance or capacitance is easy to measure in a laboratory setting, it requires additional mixed-signal circuitry to incorporate into a larger digital system. An interesting solution to this problem can be found in [ 12 ], where the variable mobility of charge carriers affects propagation delay within ring oscillators. This provides a frequency output, which can then be measured using a simple digital counter.…”

Section: Introductionmentioning

confidence: 99%

A Tiny Flexible Differential Tension Sensor

Wieczorek

Starecki

Gołofit

et al. 2023

Sensors

View full text Add to dashboard Cite

Modern applications of Internet of Things (IoT) devices require cheap and effective methods of measurement of physical quantities. Cheap IoT devices with sensor functionalities can detect a lack or excess of substances in everyday life or industry processes. One possible use of tension sensors in IoT applications is the automated replenishment process of fast moving consumer goods (FMCG) on shop shelves or home retail automation that allows for quick ordering of FMCG, where the IoT system is a part of smart packaging. For those reasons, a growing demand for cheap and tiny tension sensors has arisen. In this article, we propose a solution of a small flexible tension sensor fabricated in an amorphous InGaZnO (a-IGZO) thin-film process that can be integrated with other devices, e.g., near-field communications (NFC) or a barcode radio frequency identification (RFID) tag. The sensor was designed to magnify the slight internal changes in material properties caused by mechanical stress. These changes affect the dynamic electrical properties of specially designed inverters for a pair of ring oscillators, in which the frequencies become stress-dependent. In the article, we discuss and explain the approach to the optimum design of a ring oscillator that manifests the highest sensitivity to mechanical stress.

show abstract

Section: Introductionmentioning

confidence: 99%

A Tiny Flexible Differential Tension Sensor

Wieczorek

Starecki

Gołofit

et al. 2023

Sensors

View full text Add to dashboard Cite

show abstract

“…Beside the more classical passive resistors mounted in Wheatstone bridges [9][10][11][12], novel active structures have been developed and already reported [13][14][15][16]. These inherently co-integrated solutions are using transistors mounted in ring oscillators placed on thick silicon membranes, as pressure sensitive elements.…”

Section: Introductionmentioning

confidence: 99%

Characterization of FD SOI devices and VCO’s on thin dielectric membranes under pressure

Olbrechts

Rue

Suski³

et al. 2007

Solid-State Electronics

View full text Add to dashboard Cite

“…7 the increase in the frequency is from approximately 3 MHz to 7 MHz for the individual oscillators while the difference between them is close to constant. As expected a differential implementation is necessary to remove common-mode noise in addition to increasing the sensitivity to pressure as shown in Equation 6.…”

Section: A Unstressed Diementioning

confidence: 94%

“…Finally out-of-band quantization noise is removed using a second-order Sinc decimation filter. In [5] and [6] similar solutions employing a pressure controlled ring oscillator are presented. The circuit outputs are however still analog increasing the sensitivity to noise induced in bonding wires and off-chip interconnects.…”

Section: Introductionmentioning

confidence: 96%

“…If the channel is oriented normal to the [110] direction, the variation in drain current is given by (5) The in-plane normal stress and , and the in-plane shear stress are evaluated in the [100] and [010] coordinate system, while the normal stress are evaluated in the [001] direction normal to the (100) surface of the wafer. By calculating the difference between Equation (4) and (5) we get (6) The value of is typically 138.1 for p-MOS devices compared to -13. 8 for n-MOS devices at room temperature.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Piezoresistive CMOS-MEMS pressure sensor with ring oscillator readout including ΣΔ analog-to-digital converter on-chip

Oysted

Wisland

Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005.

View full text Add to dashboard Cite

The application of Microelectromechanical Systems (MEMS) is currently growing, increasing the demands for efficient interfacing between the MEMS sensor and CMOS interfacing circuitry. This paper presents a fully integrated CMOS-MEMS pressure sensor, including an frequency-to-digital converter on the same CMOS die. The main purpose of this work is to explore the properties of monolithically integrated MEMS-sensors and CMOS circuitry. The expected features are reduced production cost and reduced noise sensitivity. The fully integrated sensor has been fabricated in a standard 0.6 m CMOS process from Austria Micro Systems (AMS). Only one single post-processing step is required to form the pressure sensitive diaphragm. Theoretical discussions are presented along with measured results. The measured results confirm the theoretical discussions. The chip size is 13mm and the power consumption is 30mW@3.0V

show abstract

Silicon pressure sensor with frequency output

Cited by 19 publications

References 7 publications

A Tiny Flexible Differential Tension Sensor

A Tiny Flexible Differential Tension Sensor

Characterization of FD SOI devices and VCO’s on thin dielectric membranes under pressure

Piezoresistive CMOS-MEMS pressure sensor with ring oscillator readout including ΣΔ analog-to-digital converter on-chip

Contact Info

Product

Resources

About

Silicon pressure sensor with frequency output

Cited by 19 publications

References 7 publications

A Tiny Flexible Differential Tension Sensor

A Tiny Flexible Differential Tension Sensor

Characterization of FD SOI devices and VCO’s on thin dielectric membranes under pressure

Piezoresistive CMOS-MEMS pressure sensor with ring oscillator readout including &#x03A3;&#x0394; analog-to-digital converter on-chip

Contact Info

Product

Resources

About

Piezoresistive CMOS-MEMS pressure sensor with ring oscillator readout including ΣΔ analog-to-digital converter on-chip