Silicon Photonics for Advanced Optical Interconnections

Zhou, Zhen; Tu, Zhiying; Li, Tiantian; Wang, Xingjun

doi:10.1109/jlt.2014.2377756

Cited by 36 publications

(13 citation statements)

References 28 publications

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“…Silicon photonics seem to be one of the advanced research directions in the field of IC optical interconnection [10][11][12]. This approach provides some important benefits, such as small losses, adaptability to streamlined manufacture, and high efficiency of waveguides.…”

Section: Introductionmentioning

confidence: 99%

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Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Pisarenko

Ryndin

2019

Electronics

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In this paper, we address the problem of research and development of the advanced optoelectronic devices designed for on-chip optical interconnections in integrated circuits. The development of the models, techniques, and applied software for the numerical simulation of carrier transport and accumulation in high-speed AIIIBV (A and B refer to group III and V semiconductors, respectively) optoelectronic devices is the purpose of the paper. We propose the model based on the standard drift-diffusion equations, rate equation for photons in an injection laser, and complex analytical models of carrier mobility, generation, and recombination. To solve the basic equations of the model, we developed the explicit and implicit techniques of drift-diffusion numerical simulation and applied software. These aids are suitable for the stationary and time-domain simulation of injection lasers and photodetectors with various electrophysical, constructive, and technological parameters at different control actions. We applied the model for the simulation of the lasers with functionally integrated amplitude and frequency modulators and uni-travelling-carrier photodetectors. According to the results of non-stationary simulation, it is reasonable to optimize the parameters of the lasers-modulators and develop new construction methods aimed at the improvement of photodetectors’ response time.

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Section: Introductionmentioning

confidence: 99%

“…If the fixed current mode is considered, the boundary conditions in Equations (9), (10), and (12) remain unchanged, and Equation 11is replaced by the following formula [22]:…”

mentioning

confidence: 99%

Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Pisarenko

Ryndin

2019

Electronics

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“…Many papers are aimed at the implementation of silicon and silicon-germanium on-chip optical interconnections [11][12][13]. This concept seems to be optimal in terms of IC manufacturability.…”

Section: Introductionmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

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Abstract:In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A III B V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results' adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

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“…Silicon photonics, on the other hand, has its advantages for building low-cost and very largescale photonic circuits due to the high refractive-index contrast of a silicon waveguide, the low optical loss in the communication wavelength range, and, most importantly, the compatibility with Complementary Metal-Oxide Semiconductor (CMOS) fabrication technology [7]- [9]. Many research groups and manufacturers have introduced a vast number of multi-functional, highspeed, and energy efficient devices, as well as demonstrator systems, for on-/off-chip interconnects based on the silicon photonics platform [10]- [13].…”

Section: Introductionmentioning

confidence: 99%

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering

Wu¹,

Huang²,

Keyvaninia³

et al. 2016

Opt. Express

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A six-channel wavelength-division-multiplexed optical transceiver with a compact footprint of 1.5 Â 0.65 mm 2 for off-chip and on-chip interconnects is demonstrated on a single silicon-on-insulator chip. An arrayed waveguide grating is used as the (de)multiplexer, and III-V electroabsorption sections fabricated by hybrid integration technology are used as both modulators and detectors, which also enable duplex links. The 30-Gb/s capacity for each of the six wavelength channels for the off-chip transceiver is demonstrated. For the on-chip interconnect, an electrical-to-electrical 3-dB bandwidth of 13 GHz and a data rate of 30 Gb/s per wavelength are achieved.

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Silicon Photonics for Advanced Optical Interconnections

Cited by 36 publications

References 28 publications

Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Drift-Diffusion Simulation of High-Speed Optoelectronic Devices

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering

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