All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering

Abstract

A six-channel wavelength-division-multiplexed optical transceiver with a compact footprint of 1.5 Â 0.65 mm 2 for off-chip and on-chip interconnects is demonstrated on a single silicon-on-insulator chip. An arrayed waveguide grating is used as the (de)multiplexer, and III-V electroabsorption sections fabricated by hybrid integration technology are used as both modulators and detectors, which also enable duplex links. The 30-Gb/s capacity for each of the six wavelength channels for the off-chip transceiver is demonstrated. For the on-chip interconnect, an electrical-to-electrical 3-dB bandwidth of 13 GHz and a data rate of 30 Gb/s per wavelength are achieved.

Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser

“…Micro-packaging solutions compatible with isolator integration have been developed for the hybrid integration of a laser with SiP chips 28 . Heterogeneous integration of the MLL 29 and the SOA 30 would also reduce reflections at the first interfaces, potentially allowing for implementation of the system with a single isolator at the output of the Tx. Hybrid integration is even more challenging for the SOA due to its two optical interfaces and is currently under development.…”

The Progress and Trend of Heterogeneous Integration Silicon/III-V Semiconductor Optical Amplifiers

“…Furthermore, their results demonstrated that with the power consumption of the SOA being <250 mW, the converter could realize 6 pJ/bit energy consumption at 40 Gb/s. The hybrid integration method involves DVS-BCB bonding [86], as shown in Figure 13. In the same year, Komljenovic et al [20] from the University of California realized an tunable laser on low-loss silicon waveguide platforms with micro-ring resonators as the feedback component, as shown in Figure 12b.…”

“…Furthermore, their results demonstrated that with the power consumption of the SOA being <250 mW, the converter could realize 6 pJ/bit energy consumption at 40 Gb/s. The hybrid integration method involves DVS-BCB bonding [86], as shown in Figure 13.…”