Silicon photonics co-integrated with silicon nitride for optical phased arrays

Marinins, Aleksandrs; Dwivedi, Sarvagya; Kjellman, Jon Øyvind; Kerman, Sarp; David, T.; Figeys, Bruno; Jansen, Roelof; Tezcan, Deniz Sabuncuoglu; Rottenberg, Xavier; Soussan, Philippe

doi:10.7567/1347-4065/ab5b6d

Cited by 12 publications

(2 citation statements)

References 17 publications

(18 reference statements)

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“…Specifically, the MQW stack can be grown on silicon either in the form of a thick substrate or a standard 220 nm SOI epilayer, followed by the lowtemperature PECVD SiN. In the SOI case, silicon nitride can act as the bridging pathway to the SOI waveguides via evanescent coupling and adiabatic tapers (<0.1 dB/transition 28,29 ), enabling a flexible photonic integration with varying applications (e.g. temperature insensitive (de)multiplexers in SiN and tight bendings in SOI), taking advantage of the best properties of both platforms.…”

Section: Introductionmentioning

confidence: 99%

Advancing Photonic Communications: High-Density Integration of a 100 Gb/s O-Band QCSE Modulator on Silicon Substrates

Skandalos,

Bucio,

Mastronardi

et al. 2024

Preprint

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With the growth of data-intensive artificial intelligence models and the roll-out of high-capacity 5G telecom networks, the use of ultra fast transceivers with low power consumption has become essential in data centres. Quantum-confined Stark effect (QCSE) modulators are one of the contender systems that offer the potential to achieve optical modulation at high data rate, whilst retaining low real estate, low power consumption and operation in the O-band. Such modulators can be fabricated using complementary metal-oxide semiconductor (CMOS) materials including Ge/SiGe multiple quantum-well (MQW) stacks grown on silicon (Si), and be integrated with silicon nitride (SiN) on a Si substrate to retain CMOS compatibility and potential for large scale manufacturing. Here we demonstrate an O-band 2.5×50 µm2 Ge/SiGe QCSE modulator butt-coupled to SiN waveguides on Si and silicon-on-insulator (SOI) substrates. With this novel waveguide integration technique and a high-index contrast waveguide interface that utilises anti-reflective coatings, coupling losses of less than 1 dB were achieved along with better than −13.58 dB back-reflection in the O-band. The static extinction ratio (ER) of the modulator remained unchanged in a 20-80 ◦C range achieving in excess of 5 dB, with a 3.01 dB dynamic ER at 50 Gb/s using an on-off keying (OOK) modulation scheme. The modulator also achieved a 100 Gb/s data rate with an ER of 2.28 dB and an average energy consumption of <70 fJ/bit, paving a way to fast and energy-efficient optical interconnects.

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Section: Introductionmentioning

confidence: 99%

Advancing Photonic Communications: High-Density Integration of a 100 Gb/s O-Band QCSE Modulator on Silicon Substrates

Skandalos,

Bucio,

Mastronardi

et al. 2024

Preprint

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“…Silicon nitride is also of further interest due to its mid-index identity (refractive index, n 2) and its low thermo-optic coefficient making it attractive for wavelength division (de)multiplexing (WDM) 18 , given that temperature and fabrication variations do not affect significantly the behavior of the supported optical mode. Based on the above advantages, SiN can be used as the main waveguide platform or as a bridging pathway to the SOI waveguide exploiting the evanescent coupling through adiabatic tapers showing a performance of even less than /transition loss 19 , 20 . Consequently, each platform can be used for different applications (e.g.…”

Section: Introductionmentioning

confidence: 99%

Coupling strategy between high-index and mid-index micro-metric waveguides for O-band applications

Skandalos

Bucio

Mastronardi

et al. 2022

Sci Rep

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The integration of fast and power efficient electro-absorption modulators on silicon is of utmost importance for a wide range of applications. To date, Franz-Keldysh modulators formed of bulk Ge or GeSi have been widely adopted due to the simplicity of integration required by the modulation scheme. Nevertheless, to obtain operation for a wider range of wavelengths (O to C band) a thick stack of Ge/GeSi layers forming quantum wells is required, leading to a dramatic increase in the complexity linked to sub-micron waveguide coupling. In this work, we present a proof-of-concept integration between micro-metric waveguides, through the butt-coupling of a $${1.25}\,{\upmu \hbox {m}}$$ 1.25 μ m thick N-rich silicon nitride (SiN) waveguide with a $${1.25}\,{\upmu \hbox {m}}$$ 1.25 μ m thick silicon waveguide for O-band operation. A numerical analysis is conducted for the design of the waveguide-to-waveguide interface, with the aim to minimize the power coupling loss and back-reflection levels. The theoretical results are compared to the measured data, demonstrating a coupling loss level of $${0.5}\,\hbox {dB}$$ 0.5 dB for TE and TM polarisation. Based on the SiN-SOI interconnection simulation strategy, the simulation results of a quantum-confined Stark effect (QCSE) stack waveguide coupled to a SiN waveguide are then presented.

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Silicon Nitride Integrated Photonics from Visible to Mid‐Infrared Spectra

Buzaverov,

Baburin,

Sergeev

et al. 2024

Laser & Photonics Reviews

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Silicon nitride (Si3N4) photonic integrated circuits (PICs) are of great interest due to their extremely low propagation loss and higher integration capabilities. The number of applications based on the silicon nitride integrated photonics platform continues to grow, including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR), hybrid neuromorphic and quantum computing. It's potential for CMOS compatibility, as well as advances in heterogeneous integration with silicon‐on‐insulator, indium phosphate, and lithium niobate on insulator platforms, are leading to an advanced hybrid large‐scale PICs. Here, they review key trends in Si3N4 photonic integrated circuit technology and fill an information gap in the field of state‐of‐the‐art devices operating from the visible to the mid‐infrared spectrum. A comprehensive overview of its microfabrication process details (deposition, lithography, etching, etc.) is introduced. Finally, the limitations and challenges of silicon nitride photonics performance are pointed out in an ultra‐wideband, providing routes and prospects for its future scaling and optimization.

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Silicon photonics co-integrated with silicon nitride for optical phased arrays

Cited by 12 publications

References 17 publications

Advancing Photonic Communications: High-Density Integration of a 100 Gb/s O-Band QCSE Modulator on Silicon Substrates

Advancing Photonic Communications: High-Density Integration of a 100 Gb/s O-Band QCSE Modulator on Silicon Substrates

Coupling strategy between high-index and mid-index micro-metric waveguides for O-band applications

Silicon Nitride Integrated Photonics from Visible to Mid‐Infrared Spectra

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