Silicon nanoparticles embedded in SiO2 films with visible photoluminescence

Makimura, Tetsuya; Kunii, Yasuhiko; Ono, Nagato; Murakami, Kouichi

doi:10.1016/s0169-4332(97)00661-2

Cited by 35 publications

(20 citation statements)

References 11 publications

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“…It should be noted that similar components were observed not only with laser ablated Si-based films, [11][12][13][14][15] but with the films produced by a variety of another techniques as well ͑see, e.g., Refs. In this case we recorded only two PL bands around 1.6 -1.7 and 2.2-2.3 eV, whose relative contribution depended on the oxidation method.…”

Section: Discussionmentioning

confidence: 59%

“…10-17͒. For example, in some studies [12][13][14][15] the films were thermally annealed after the fabrication, that could additionally modify their properties. Some groups reported nearly fixed PL peaks for the films deposited in different conditions, [11][12][13][14][15] whereas other teams observed a clear shift of the PL peak when the particle size was changed by a variation of deposition parameters.…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence characterization of Si-based nanostructured films produced by pulsed laser ablation

Kabashin

Meunier

Leonelli

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inMulti-band photoluminescence in TiO2 nanoparticles-assembled films produced by femtosecond pulsed laser deposition J. Appl. Phys. 114, 043503 (2013); 10.1063/1.4816251Morphology, structure, chemical composition, and light emitting properties of very thin anodic silicon films fabricated using short single pulses of current Photoluminescence ͑PL͒ properties of nanostructured Si-based films produced by pulsed laser ablation in a residual gas are studied. Two types of PL signals have been identified. Signals of the first type are sensitive to the ablation conditions with the PL peak position depending on the gas pressure during the deposition. Signals of the second type with PL peaks around 1.6 -1.7 and 2.2-2.3 eV are almost independent of the ablation conditions and are mainly determined by the presence of oxygen-related complexes in the film composition. These complexes can be formed through a prolonged natural oxidation or thermal annealing of the films, or through the direct laser ablation in the presence of oxygen. Possible mechanisms of PL signals are discussed.

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Section: Discussionmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

Photoluminescence characterization of Si-based nanostructured films produced by pulsed laser ablation

Kabashin

Meunier

Leonelli

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…It should be noticed that we have not observed this band in the spectra of the SiO x films annealed at 1300 K [22], as well. Other authors have also reported [24,31,32] a band centered at a similar energy and not sensitive to annealing conditions in SiO x thin films with uncompleted phase separation. They assigned it to radiative carrier recombination via defect centers in the SiO x matrix, which are due to the oxygen deficiency.…”

Section: Discussionmentioning

confidence: 75%

Room temperature photoluminescence from amorphous silicon nanoparticles in SiO thin films

Bineva

Nesheva

Aneva

et al. 2007

Journal of Luminescence

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“…26 However, the PL peak position varies, depending on the deposition conditions, [24][25][26] similar to what was reported for porous Si produced by other methods. 15,21,22,27 Here, we examine the PL behavior of PLD-deposited Si-based nanoporous SiO x /Si ͑natural oxide formed on Si͒, SiN x , and SiO x thin films, having completely different chemistries and microstructures. Field-emission scanning electron microscopy ͑FESEM͒, x-ray photoelectron spectroscopy ͑XPS͒, and photoacoustic Fourier transform infrared ͑FTIR͒ have been employed to characterize the surface chemistries and microstructures, which are then used to discuss the origin of the PL in our samples.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of highly porous nanostructured Si-based thin films deposited by pulsed laser ablation

Yang

Ethier

Sacher

et al. 2005

Journal of Applied Physics

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Nanostructured, Si-based cottonlike, highly porous thin films of Si, SiNx, and SiOx were deposited by the excimer laser ablation of Si targets in He, He∕N2, and He∕O2 ambients, respectively. Photoluminescence (PL), x-ray photoelectron spectroscopy, and photoacoustic Fourier transform IR have been used to characterize these deposits. After exposure to air, broad PL bands appear at 1.7eV (Si), 2.0eV (SiNx), and 2.3eV (SiOx); air oxidation causes the separation of the PL spectra into two identical component peaks, at 1.5 and 2.3eV, whose relative ratios differ with film composition. The present results indicate that the red PL peak at 1.5eV is due to the localized states at the oxidized surfaces of these materials, while the green PL peak at 2.3eV is due to oxygen-related defects in their local disordered nanostructures.

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Silicon nanoparticles embedded in SiO2 films with visible photoluminescence

Cited by 35 publications

References 11 publications

Photoluminescence characterization of Si-based nanostructured films produced by pulsed laser ablation

Photoluminescence characterization of Si-based nanostructured films produced by pulsed laser ablation

Room temperature photoluminescence from amorphous silicon nanoparticles in SiO thin films

Photoluminescence of highly porous nanostructured Si-based thin films deposited by pulsed laser ablation

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