Room temperature photoluminescence from amorphous silicon nanoparticles in SiO thin films

Temperature dependent photoluminescence of PECVD a-SiOx:H (x<2)

“…Formation of a-Si nano-clusters within SiO x matrix has been studied frequently in the literature to elucidate the PL nature of aSiO x :H samples [16,18,25,43]. However, regarding our samples this does not seem to be the case.…”

“…The 2.1 eV PL band is attributed to radiative transitions based on the oxygen vacancy defect (E 0 centers) [24] or on the NBOHCs [16]. The quantum confinement of carriers in two phase systems has also been used to explain the luminescence mechanism of the 2.1 eV PL band [25][26][27][28]. The 2.7-2.9 eV PL band was proposed to result from triplet-singlet transition in an oxygen vacancy [29].…”

Observation and enhancement of visible photoluminescence of PECVD a‐SiOx:H (x < 2) thin films by microcavity effect

“…H samples a-SiO x :H samples show strong room temperature visible PL property centered around a photon energy of 2.1 eV [3,[6][7][8]. The PL spectrum of a-SiO x :H thin film sample is exposed to alter due to the interference fringes resulting from multiple reflections between two interfaces of the single layer sample [3][4]13].…”

“…The PL from a-SiO x :H single layers has been attributed mainly to the three recombination mechanisms: (1) the separation of two phases of a-Si:H and SiO 2 [5]; (2) the intrinsic defects of SiO x structure such as self trapped excitons (STE), non-bridging oxygen hole center (NBOHC) [5][6][7] and (3) the tail-to-tail radiative recombination [8]. The importance of deposition conditions and post deposition annealing treatment on the PL property of a-SiO x :H have been also studied [3,9].…”

Excitation power dependent photolu‐ minescence of PECVD a‐SiOx:H (x<2) thin films

“…The PL has been attributed mainly to three mechanisms: (1) the two phase model of a-Si:H and SiO 2 [3]; (2) the intrinsic defects of SiO x structure such as self trapped excitons (STE) [4,5] and (3) the tail-to-tail radiative recombination [6]. The effects of deposition conditions and post annealing treatment on PL property of a-SiO x :H have been also investigated [7].…”