Silicon Millimeter-Wave Integrated Circuit Technology

Strohm, K.M.

doi:10.1007/978-3-642-79031-7_7

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Fabrication Process1

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1996

2000

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Cited by 7 publications

(2 citation statements)

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“…The complete layer sequence was grown by silicon molecular beam epitaxy (Si-MBE). The device with a diameter of 22 pm is processed following a published SIMMWTC process [4]. The impedance of the QRDD JMF' ATT diode was measured up to 50 GHz by means of network analyzer (NWA) attached to a CASCADE wafer prober.…”

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confidence: 99%

A radiating monolithic integrated planar oscillator at 55 GHz

Stiller

Strohm

Sasse

et al. 1996

IEEE Microw. Guid. Wave Lett.

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mentioning

confidence: 99%

A radiating monolithic integrated planar oscillator at 55 GHz

Stiller

Strohm

Sasse

et al. 1996

IEEE Microw. Guid. Wave Lett.

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“…The layout contains capacitive coupled ring resonators for determining the dielectric constant and the loss tangent of the high resistivity substrate material, microstrip transmission lines for measuring the attenuation, microstrip discontinuities, MIM capacitors, spiral inductors, Lange couplers and via hole test structures. The fabrication of the passive elements is described elsewhere [7]. Fabrication is performed on high resistivity silicon substrates (p > 4000 Rcm) with a 550 nm thick field oxide (Si02).…”

Section: Fabrication Processmentioning

confidence: 99%

Via hole technology for microstrip transmission lines and passive elements on high resistivity silicon

Strohm

Nuechter

Rheinfelder

et al.

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)

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A process is described for the realization of via holes for microstrip transmission lines and passive elements on high resistivity Silicon (p > 4000 Rcm, 100 mm diameter, 100 pm thickness). Via hole etching with vertical sidewalls is performed using an advanced silicon etch (ASE) process. The measured and simulated inductance of the gold metallized via hole is 22 pH. Measurements on a ring resonator -isolated by 550 nm thermal oxide from the substrate -yield a dielectric constant E, = 11.2 and a loss tangent tan6 around for the 4000 Rcm silicon substrate. Attenuation of microstrip trans-mission lines are -= 0.1 dB/mm at 20 GHz.

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Silicon Germanium Alloy Devices

Kolodzey

2000

Handbook of Thin Film Devices

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Silicon Millimeter-Wave Integrated Circuit Technology

Cited by 7 publications

References 24 publications

A radiating monolithic integrated planar oscillator at 55 GHz

A radiating monolithic integrated planar oscillator at 55 GHz

Via hole technology for microstrip transmission lines and passive elements on high resistivity silicon

Silicon Germanium Alloy Devices

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