Silicon metal-semiconductor–metal photodetector with zinc oxide transparent conducting electrodes

Comparison of the Optical and Electrical Properties of Al-Doped ZnO Films Using a Lorentz Model

“…The Al dopant, a group-III element, has become the most promising n-type semiconductor candidate because of its high thermal stability [4][5][6][7]. Al-doped ZnO (AZO) film has played a significant role in the development of optoelectronic devices [8][9][10][11]. It is not only highly visible transparent but also has metal-like electrical conductivity [1].…”

Transparent conductor-Si pillars heterojunction photodetector

“…However, an optically transparent and electrical conductor forms a rectifying junction for a semiconductor. 7,8,[15][16][17][18] According to the difference of work functions between a transparent conductor and a semiconductor, a junction of these two materials spontaneously establishes an electric field and will work as a heterojunction device.…”

The influence of using different substrates on the structural and optical characteristics of ZnO thin films

“…solar cells, optoelectronic devices, sensors, and heat reflecting mirrors). In the last years, a large variety of methods have been employed for the preparation of transparent and conducting ZnO thin films such as, radio frequency (rf) magnetron sputtering [1][2][3], physical vapour deposition under vacuum [4], spray pyrolysis [5], the sol-gel method technique [6], pulsed laser deposition [7], chemical vapour deposition [8], electro-deposition [9], etc. It is also experimentally established that the structural and optical properties of these thin films are very sensitive to the deposition conditions [10][11][12].…”