Silicon field emission arrays with atomically sharp tips: turn-on voltage and the effect of tip radius distribution

Ding, Meng; Sha, Guobin; Akinwande, Akintunde I.

doi:10.1109/ted.2002.805230

Cited by 68 publications

(23 citation statements)

References 29 publications

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“…26,27 The distribution of most parameters is most likely a log-normal distribution (negative values for height and radius from a normal Gaussian distribution would not make sense). A log-normal distribution for the radius has also been observed by Ding et al, 28,29 as well as by Park et al for the field enhancement factor. 30…”

Section: Simplified Modelsupporting

confidence: 63%

Analysis of slope-intercept plots for arrays of electron field emitters

Persaud

2013

Journal of Applied Physics

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In electron field emission experiments, a linear relationship in plots of slope vs. intercept obtained from Fowler-Nordheim analysis is commonly observed for single tips or tip arrays. By simulating samples with many tips, it is shown here that the observed linear relationship results from the distribution of input parameters, assuming a log-normal distribution for the radius of each tip. Typically, a shift from the lower-left to the upper-right of a slope-intercept plot has been correlated with a shift in work function. However, as shown in this paper, the same effect can result from a variation in the number of emitters

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Section: Simplified Modelsupporting

confidence: 63%

Analysis of slope-intercept plots for arrays of electron field emitters

Persaud

2013

Journal of Applied Physics

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“…This comparison thus shows the enormous benefit of scaling vacuum electronic device gaps down to the nanoscale, allowing for an ∼2 orders of magnitude or greater reduction in turn-on voltage while enabling stable in-air or low-vacuum operation. Our nanogap devices also exhibit record low turn-on and very high currents compared to prior field-emission demonstrations of GaN structures including nanowire arrays and individual nanowires. − We note that the emitter sharpness of our devices is quite modest compared to prior work in the field utilizing emitters with near atomic sharpness, which should greatly improve manufacturability as well as emitter stability and durability.…”

Section: Comparison To Prior Gan Field-emission Devicesmentioning

confidence: 73%

Ultralow Voltage GaN Vacuum Nanodiodes in Air

et al. 2021

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The III-nitride semiconductors have many attractive properties for field-emission vacuum electronics, including high thermal and chemical stability, low electron affinity, and high breakdown fields. Here, we report top-down fabricated gallium nitride (GaN)-based nanoscale vacuum electron diodes operable in air, with record ultralow turn-on voltages down to ∼0.24 V and stable high field-emission currents, tested up to several microamps for single-emitter devices. We leverage a scalable, top-down GaN nanofabrication method leading to damage-free and smooth surfaces. Gap-dependent and pressure-dependent studies provide new insights into the design of future, integrated nanogap vacuum electron devices. The results show promise for a new class of high-performance and robust, on-chip, III-nitride-based vacuum nanoelectronics operable in air or reduced vacuum.

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“…It is calculated from eq 2. 27,43,66 Here, B = 6.87 × 10 7 and ⌀ is the work function of metal. The β is affected in electron tunneling, and a higher value means more electron emission.…”

Section: Resultsmentioning

confidence: 99%

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

Heo,

Shin,

Jun

et al. 2023

ACS Nano

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A nano vacuum tube which consists of a vacuum transistor and a nano vacuum chamber was demonstrated. For the device, a vacuum region is an electron transport channel, and a vacuum is a tunneling barrier. Tilted angle evaporation was studied for the formation of the nano level vacuum chamber structure. This vacuum tube was ultraminiaturized with several tens of 10–18 L scale volume and 10–6 Torr of pressure. The device structure made it possible to achieve a high integration density and to sustain the vacuum state in various real operations. In particular, the vacuum transistor performed stably in extreme external environments because the tunneling mechanism showed a wide range of working stability. The vacuum was sustained well by the sealing layer and provided a defect-free tunneling junction. In tests, the high vacuum level was maintained for more than 15 months with high reliability. The Al sealing layer and tube structure can effectively block exposed light such as visible light and UV, enabling the stable operation of the tunneling transistor. In addition, it is estimated that the structure blocks approximately 5 keV of X-ray. The device showed stable operating characteristics in a wide temperature range of 100–390 K. Therefore, the vacuum tube can be used in a wide range of applications involving integrated circuits while resolving the disadvantages of a large volume in old vacuum tubes. Additionally, it can be an important solution for next-generation devices in various fields such as aerospace, artificial intelligence, and THz applications.

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Silicon field emission arrays with atomically sharp tips: turn-on voltage and the effect of tip radius distribution

Cited by 68 publications

References 29 publications

Analysis of slope-intercept plots for arrays of electron field emitters

Analysis of slope-intercept plots for arrays of electron field emitters

Ultralow Voltage GaN Vacuum Nanodiodes in Air

Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments

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