Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

Abstract

A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH 2 F 2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH 2 F 2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

Micromachining of polymers using atmospheric pressure inductively coupled helium plasma localized by a scanning nanopipette probe microscope

“…Atmospheric pressure plasmas (APPs) have attracted the attention of scientists in various fields such as physics [1][2][3][4][5], engineering [6][7][8][9][10][11][12], medicine [13,14], and biology [15][16][17][18] * Author to whom any correspondence should be addressed. because they are easily generated under atmospheric pressure.…”

Sub-micrometer plasma-enhanced chemical vapor deposition using an atmospheric pressure plasma jet localized by a nanopipette scanning probe microscope

“…Atmospheric pressure plasmas (APPs) have attracted significant attention as plasmas that can be generated in the atmosphere; thus, their applications are expected to be used in various fields, such as physics [1][2][3][4][5][6][7], medicine [8][9][10][11], biology [12][13][14][15][16][17], and engineering [18][19][20][21][22][23][24][25][26][27]. In particular, an APP jet (APPJ), which is a jet-like plasma injected from the tip aperture of a tube nozzle under atmospheric pressure [28,29], has recently been applied to surface material processing and modification.…”

Particle formation during deposition of SiO x nanostructured thin films by atmospheric pressure plasma jet

“…Compared to low pressure non-equilibrium plasma, atmospheric pressure plasma can be obtained at common conditions and does not require a special chamber and/or vacuum equipment. [1][2][3][4] Due to these benefits, atmospheric pressure plasmas are widely used in applications such as surface treatment of various materials, 5,6) activation and cleaning of interfaces, 7) in plasma medicine for sterilization and wound healing 8,9) or destroying cancer cells, [10][11][12] in agriculture to stimulate the germination of seeds and plants, [13][14][15][16] in environmental applications for the decomposition of volatile organic compounds and for etching, [17][18][19][20] synthesis of thin films and nanoparticles in material engineering. [21][22][23][24] One of the most promising directions and applications of non-equilibrium atmospheric pressure plasma is the synthesis of thin functional films and nanoparticles by the AP-PECVD method (atmospheric plasma enhanced chemical vapor deposition).…”