2011
DOI: 10.1063/1.3579541
|View full text |Cite|
|
Sign up to set email alerts
|

Silicon diffusion in aluminum for rear passivated solar cells

Abstract: We show that the lateral spread of silicon in a screen-printed aluminum layer increases by (1.50±0.06) μm/°C, when increasing the peak firing temperature within an industrially applicable range. In this way, the maximum spread limit of diffused silicon in aluminum is predictable and does not depend on the contact area size but on the firing temperature. Therefore, the geometry of the rear side pattern can influence not only series resistance losses within the solar cell but the process of contact formation its… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

3
39
0

Year Published

2012
2012
2017
2017

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 60 publications
(42 citation statements)
references
References 15 publications
(18 reference statements)
3
39
0
Order By: Relevance
“…Si diffuses much faster into the Al/Si alloy (through the necks between sintered Al particles) than Al diffuses in the opposite direction toward the local contacts. As the cooling is very fast (∼5 s), it may occur that Si solidifies as lamellas in the Al particles, instead of recrystallizing in the local contact area, and voids are formed [5]. To avoid void formation due to a lack of Si during rapid cooling, there are several approaches.…”
Section: Introductionmentioning
confidence: 99%
See 2 more Smart Citations
“…Si diffuses much faster into the Al/Si alloy (through the necks between sintered Al particles) than Al diffuses in the opposite direction toward the local contacts. As the cooling is very fast (∼5 s), it may occur that Si solidifies as lamellas in the Al particles, instead of recrystallizing in the local contact area, and voids are formed [5]. To avoid void formation due to a lack of Si during rapid cooling, there are several approaches.…”
Section: Introductionmentioning
confidence: 99%
“…Frequently, a formation of voids in local rear contacts is observed [5], [6] resulting in some cases in a non-BSF passivated local contact or no local contact to the rear-side metallization at all. One of the hypotheses regarding void formation is that voids are formed due to the Kirkendall effect [7].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…A well-known problem of the PERC concept is the formation of voids in the rear local contacts [4], [5]. The Kirkendall effect [6] is a good explanation for the void formation, as Si diffuses much faster in Al than Al in Si [4].…”
Section: Introductionmentioning
confidence: 99%
“…By adding only a few process steps, cell efficiencies more than 21% on large-area (15.6 × 15.6 cm 2 ) Czochralski (Cz) monocrystalline Si solar cells have been reached [2], [3]. A well-known problem of the PERC concept is the formation of voids in the rear local contacts [4], [5]. The Kirkendall effect [6] is a good explanation for the void formation, as Si diffuses much faster in Al than Al in Si [4].…”
Section: Introductionmentioning
confidence: 99%