Silicon detectors for tracking and vertexing

In this paper, we described a method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon for the formation of the large-sized, p-i-n structured Si(Li) radiation detectors. The p-i-n structure is a p-n junction with a doped region, where the “i-region” is between the n and the p layers. A well-defined i-region is usually associated with p or n layers with high resistivities. The p-i-n structure is mostly used in diodes and in some types of semiconductor radiation detectors. The uniqueness of this method is that, in this method, the processes of diffusion and drift of lithium-ions, which are the main processes in the formation of Si(Li) p-i-n structures, are produced from both flat sides of cylindrical-shaped monocrystalline silicon, at optimal temperature (T = 420 °C) conditions of diffusion, and subsequently, with synchronous supply of temperature (from 55 to 100 °C) and reverse bias voltage (from 70 to 300 V) during drift of lithium-ions into silicon. Thus, shortening the manufacturing time of the detector and providing a more uniform distribution of lithium-ions in the crystal volume. Since, at present, the development of manufacturing of large-sized Si(Li) detectors is hindered due to difficulties in obtaining a uniformly compensated large area and time-consuming manufacturing process, the proposed method may open up new possibilities in detector manufacturing.

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“…Note that in (6), the diffusion coefficient depends on the coordinate, because it is a function of concentration:…”

Section: Diffusion Of LI Atoms Into Simentioning

confidence: 99%

“…There are different types [ 1 , 2 , 3 , 4 ] and manufacturing technologies [ 5 , 6 , 7 ] of Si(Li) p-i-n detectors. For detectors with a large sensitive area, the method of p-type silicon compensation by lithium-ions remains as one of the effective methods [ 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

et al. 2021

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“…Silicon drift detectors (SDDs) were proposed in 1983 by Gatti and Rehak [4] as high-resolution position-sensitive detectors for fast-ionizing particles and spectroscopy of X-rays. In recent years, because the technology has become matured in terms of material growth and device fabrication, SDDs are widely used in different application [5,6,7,8], especially in deep-space exploration, because SDD has preeminent properties such as high sensitivity, high energy resolution, low leakage current, and high quantum efficiency. So, it is suitable to be used in X-ray navigation and X-ray communication as a preferable substitution for conventional radiation detectors such as microchannel plate and focused detector.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Radiation Damage for Silicon Drift Detector

Liu

Zhu

Yao

et al. 2019

Sensors

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Silicon drift detector with high sensitivity and energy resolution is an advanced detector which is suitable to be used in deep space detection. To study and reveal the radiation damage of the silicon drift detector (SDD) in a deep-space environment, which will degrade the detector performance, in this paper, the SDD radiation damage effects and mechanics, including displacement damage and ionization damage, for irradiations of different energy of neutrons and gammas are investigated using Geant4 simulation. The results indicate the recoil atoms distribution generated by neutrons in SDD is uniform, and recoil atoms’ energy is mainly in the low energy region. For secondary particles produced by neutron irradiation, a large energy loss in inelastic scattering and fission reactions occur, and neutron has a significant nuclear reaction. The energy deposition caused by gammas irradiation is linear with the thickness of SDD; the secondary electron energy distribution produced by gamma irradiation is from several eV to incident particle energy. As the scattering angle of secondary electron increases, the number of secondary electrons decreases. Therefore, a reasonable detector epitaxial thickness should be set in the anti-irradiation design of SDD.

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“…In particle physics, tracking and vertexing relies strongly on silicon-based detectors, including strip detectors (noise ∼ 1000 e − to 2000 e − ), pixel detectors (noise ∼ 10 e − to 100 e − ), and others [1]. These detectors are typically arranged in multiple planes in order to allow accurate reconstruction of the vertices.…”

Section: Introductionmentioning

confidence: 99%

3D electron tracking and vertexing in single plane pixel detectors

Blaj

Kenney

Caragiulo

et al. 2016

2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/R

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In particle physics, tracking and vertexing typically relies on silicon strip or pixel detectors arranged in multiple planes. The ePix100a detector was developed for low noise xray detection. When used for high energy particle tracking and imaging, it yields a signal to noise ratio (SNR) of 500 to 1000. The unusually large SNR allows accurate reconstruction of tracks, down to subpixel resolution and 3D angular information. This paper presents ( 1) results obtained at the End Station Test Beam (ESTB) facility at SLAC National Laboratory with 4.5 GeV beams, incident at several different angles, (2) an analytical approach to accurately reconstruct 3D track position and orientation using single plane detectors, and (3) measurements with scattering targets, demonstrating the performance of the approach presented here. The same approach can be used with any other highly energetic charged particle detection, allowing good 3D position and orientation measurements using fewer or even single silicon detector planes.

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Silicon detectors for tracking and vertexing

Cited by 8 publications

References 30 publications

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

Simulation of Radiation Damage for Silicon Drift Detector

3D electron tracking and vertexing in single plane pixel detectors

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