Simulation of Radiation Damage for Silicon Drift Detector

Liu, Yang; Zhu, Tengfei; Yao, Jianxi; Ouyang, Xiaoping

doi:10.3390/s19081767

Cited by 5 publications

(3 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Researchers have extensively studied the PKAs generated by irradiated particles in materials. For example, Liu et al [13] investigated radiation damage in a silicon drift detector (SDD) and found that the distribution of displacement damage caused by neutrons in SDDs is uniform. Shen et al [14] studied the non-ionization energy loss of protons in silicon carbide and found that with an increase in incident proton energy the proportion of Si and C particles in the primary recoil atoms gradually decreased, from primary products to secondary products.…”

Section: Introductionmentioning

confidence: 99%

Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices

Zhang

Jiang

et al. 2023

Chinese Phys. B

View full text Add to dashboard Cite

Bipolar junction transistors (BJTs) are often used in spacecraft due to their excellent working characteristics. However, the complex space radiation environment induced primary knock-on atom (PKA) in BJTs through collisions, resulting in hard-to-recover displacement damage and affecting the electrical performance of electronic components. In this paper, the properties of PKAs induced by typical space-heavy ions (C, N, O, Fe) in BJTs are investigated using Monte Carlo simulations. The simulated results show that the energy spectrum of ion-induced PKAs is primarily concentrated in the low energy range (17-100 eV) and displays similar features across all tested ions. The PKAs induced by the collision of energetic ions have a large forward scattering angle, which is mainly around 88°. Moreover, PKA distribution within the transistor as a function of depth displays a peak characteristics, and the peak position is linearly proportional to the incident energy at a certain energy range. These simulation outcomes serve as crucial theoretical support for long-term semiconductor material defect evolution and ground testing of semiconductor devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices

Zhang

Jiang

et al. 2023

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…Besides the high temperature superconducting (HTS) tape model, the multilayer nanocomposites model in reactors [16] and the silicon drift detector model in deep space [17] both contain the geometric structures with thickness from micrometer to nanometer scale. In fact, it is necessary to study on the applicability of radiation damage method for models with small thickness under neutron irradiation.…”

Section: Introductionmentioning

confidence: 99%

Study on the Applicability of Neutron Radiation Damage Method Used for High-Temperature Superconducting Tape Based on Geant4 and SRIM

Zheng

Wang

2021

Science and Technology of Nuclear Installations

View full text Add to dashboard Cite

High-temperature superconducting material is a promising candidate to fabricate superconducting magnet for magnetic confinement fusion reactors. The DPA number of the 1 µm thick superconducting layer in a high temperature superconducting tape under neutron irradiation needs to be calculated to predict the property changes. The DPA cross sections, which ignore the spatial distribution of vacancies caused by PKAs, are commonly used to obtain the results of the damage energy and DPA. However, for geometric models with the thickness as small as 1 µm, the energy and angular distribution of PKAs reveal that a significant number of PKAs with relatively high energy tend to scatter forward and cross the boundary of model, so the thickness of model has the potential to affect the number of displaced atoms. In this paper, we developed a method based on Geant4 and SRIM to evaluate the deviation of the traditional analytic method caused by the thickness. Geant4 is used to obtain the location, direction, and energy of PKAs, while SRIM is used to track every PKA and obtain damage energy and the number of displaced atoms. The radiation damage calculation of simple thin plate models with different thicknesses and the tape model are conducted with the neutron energies from 1 to 14 MeV. The results show that PKAs need to be tracked continuously for models with thickness less than 10 µm and the deviation of the analytic formulas increases rapidly with the decrease of thickness. For the superconducting layer composed of four different elements in the tape, the deviation also depends on the proportion of each atomic species and the neutron-atom interaction cross sections under different incident neutron energy.

show abstract

“…in humans subject to radiation-based medical treatment) and inorganic (e.g. detectors used in space missions [7]) matter.…”

Section: Introductionmentioning

confidence: 99%

Electron collisions with molecules and molecular clusters

Gorfinkiel

2020

Eur. Phys. J. D

View full text Add to dashboard Cite

State-of-the art computational studies of electron collisions with molecules and small molecular clusters are illustrated with results obtained from the application of the R-matrix method and the UKRMol/UKRMol+ suites. High-level calculations of electronic excitation cross sections and core-excited resonances, mainly of core-excited shape character, show excellent agreement with experiment for mid-size molecules like pyrimidine and thiophene. Simpler calculations are paving the way for an in-depth understanding of the effect of hydration on resonance formation: how the shift in resonance energy depends on the characteristics of the hydrogen bond and the resonance being studied. Finally, applications of the software to a little studied process, interatomic coulombic electron capture are also illustrated.

show abstract

Simulation of Radiation Damage for Silicon Drift Detector

Cited by 5 publications

References 21 publications

Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices

Simulation of space heavy-ion induced primary knock-on atoms in bipolar devices

Study on the Applicability of Neutron Radiation Damage Method Used for High-Temperature Superconducting Tape Based on Geant4 and SRIM

Electron collisions with molecules and molecular clusters

Contact Info

Product

Resources

About