Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

Saymbetov, Ahmet; Muminov, R. A.; Japashov, Nursultan; Toshmurodov, Yorkin; Nurgaliyev, Madiyar; Koshkarbay, Nursultan; Kuttybay, Nurzhigit; Zholamanov, Batyrbek; Zhang, Jing

doi:10.3390/ma14185174

Cited by 4 publications

(3 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Earlier, in [18][19][20], in some of our works, it was reported the results of experiments on creating largesized p-i-n structures using a new approach by providing bilateral diffusion and drift of lithium charge carriers into silicon mono-crystal. Current work describes the results of modeling the process of bilateral drift of lithium charge carriers into silicon mono-crystal to significantly reduce the time of the silicon compensation process at large volumes and to eliminate the negative consequences of long-term holding of the crystal at high temperatures and electrical voltages.…”

Section: Introductionmentioning

confidence: 99%

Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

Saymbetov¹,

Muminov²,

Japashov³

et al. 2023

phst

View full text Add to dashboard Cite

In this work, we show a new method for obtaining silicon-lithium semiconductor structures using the bilateral drift of lithium particles into silicon mono-crystal in order to create nuclear radiation detectors with a wide bandgap. This method describes the simultaneous distribution of lithium ions on surfaces of cylindrical silicon crystals, which speeds up the process of obtaining the required detector structure. Here in this work, we aimed to identify the most optimal regimes of the electric field applied in the process of bilateral ion drift, as well as to investigate the effect of the thermal factors to create a drift of lithium ions. We can estimate these optimal regimes of voltage and temperature by making theoretical assumptions based on the numerical method for solving the Poisson continuity equation, the calculations of Pell and Louber. At the same time, simplifications were made to neglect the internal interaction of particles. The paper shows the results of modeling the process of bilateral drift under the influence of a stepwise increase in temperature and reverse voltage. This bilateral drift procedure facilitates the fabrication of silicon-lithium nuclear radiation detectors with large diameters and sensitive areas.

show abstract

Section: Introductionmentioning

confidence: 99%

Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

Saymbetov¹,

Muminov²,

Japashov³

et al. 2023

phst

View full text Add to dashboard Cite

show abstract

“…In our recent papers 15 , 33 , we proposed a new method of obtaining large-sized Si(Li) p–i–n detectors and investigated the physical processes during the formation of the i-region. In order to deeply explain the processes of the newly obtained detector here, in the current work, we proposed modeling and designing a signal formation procedure in these detectors using the classical Shockley equation for silicon semiconductors and a system of telegraph equations.…”

Section: Introductionmentioning

confidence: 99%

“…Works 34 – 36 show equivalent circuits of p–i–n diodes, which are the baseline for our research. In 33 we showed the distribution of lithium ions in a silicon crystal under the action of a homogeneous electric field during the creation of the detector. Here our task is to simulate the response of the p–i–n structure to external excitation using an equivalent transformation.…”

Section: Introductionmentioning

confidence: 99%

Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector

Saymbetov

Muminov

Zhang

et al. 2023

Sci Rep

Self Cite

View full text Add to dashboard Cite

Nuclear radiation detectors are indispensable for research in the field of nuclear radiation, X-ray spectroscopy and other areas. Interest in silicon p–i–n detectors of nuclear radiation is increasing today due to the possibility of their operation under normal conditions. In this paper, an equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector is proposed. The proposed circuit is obtained using the classical Shockley equation for silicon semiconductors and the telegraph equations. The parameters of the equivalent circuit were determined using the multiple regression method. As a result of simulation of the model in the MATLAB Simulink graphical development environment, the amplitude-frequency and phase-frequency characteristics of the proposed model were obtained. Using the Monte Carlo method, the alpha-decay of the uranium isotope $${}_{92}{}^{233}\mathrm{U}$$ 92 233 U , thorium isotope $${}_{90}{}^{227}\mathrm{Th}$$ 90 227 Th and americium isotope $${}_{95}{}^{241}\mathrm{Am}$$ 95 241 Am the alpha-decay spectrum was obtained. Obtained alpha-decay spectra coincides with the experimental data, presented in previous works of other authors.

show abstract

Investigation and optimisation of a lithium-drift silicon detector using Si–Li structure and bidirectional diffusion and drift techniques

Zhang,

Japashov

2024

Reviews in Inorganic Chemistry

View full text Add to dashboard Cite

The research relevance is predefined by the continuous development and improvement of radiation analysis methods and the need for more efficient and accurate detectors for various applications. This research may improve the sensitivity and resolution of Si(Li) detectors, which is important for scientific and industrial research as well as radiation safety monitoring. The research aims to analyse and improve the performance of a Si(Li) lithium-drift silicon detector. The methods used include an analytical method, classification method, functional method, statistical method, synthesis method and others. The results of the two-sided observation of lithium diffusion in silicon monocrystals provided valuable information about the characteristics of the process and its dependence on the method of silicon production. A large-diameter detector detection mode was found to be important for optimising the production of such detectors. The diffusion process in monocrystalline silicon produced by the shadowless zone melting method is relatively fast. This means that lithium ions penetrate the material rapidly and spread evenly throughout its volume. This fast diffusion process can be useful for detectors that need to respond quickly to incoming signals. It was found that in monocrystalline silicon produced by the Czochralski method, there is a delayed penetration of lithium ions.

show abstract

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

Cited by 4 publications

References 33 publications

Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector

Investigation and optimisation of a lithium-drift silicon detector using Si–Li structure and bidirectional diffusion and drift techniques

Contact Info

Product

Resources

About