Silicon Carbide Technology

Abstract

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines [1][2][3][4][5][6][7]. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems.This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.possible SiC polytypes with hexagonal crystal structure. Similarly, 15R-SiC is the most common of the many possible SiC polytypes with a rhombohedral crystal structure.

Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps

“…SiC has stable properties at high temperatures, andhigh-radiation 4 , making it a suitable material for high power electronic devices and optoelectronic applications 5 .The wide indirect band gap of this material enables manufacturing of light-emitting diodes for short wavelenghs, but more efficient application is found for photodetectors and sensors in the shortwave region of the visiblespectra 6 .AlN is also a very interesting material due to its attractive electrical and physical properties 7,8 . AlN has high hardness, high electrical resistivity, excellent thermal conductivity 9 , and stability to high temperatures and corrosive medium.…”

Unlocking the potential of wide bandgap semiconductors for harsh environments

“…SiC is used as a substrate for heteroepitaxialGaN based structures. SiC MEMS and sensors are evolving due to its excellent mechanical properties such as extreme hardness and low friction reducing mechanical wear-out [9]. …”

Application prospective of Silicon Carbide (SiC) in railway vehicles

“…Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms, each SiC polytype has its own distinct set of electrical semiconductor properties. While there are over 100 known polytypes of SiC, only a few are commonly grown in a reproducible form acceptable for use as an electronic semiconductor [4]. The most common polytypes of SiC presently being developed for electronics are 3C-SiC, 4H-SiC, and 6H-SiC.…”