Characterizing SiC-AlN semiconductor solid solutions with indirect and direct bandgaps

Abstract

The objective of the study is to characterize the dependence of the optical properties of solid solutions of silicon carbide and aluminum nitride on composition. Even small differences in composition provide manipulation of band gap features over a wide range. Data for this paper were collected by X-ray diffraction, photoluminescence and absorption spectroscopy. The evolution of the observed optical properties as a result of compositional changes were studied. X-ray studies confirm the presence of a(SiC) 1-x (AlN) x solid solution. Investigation of absorption spectra shows the optical band gap of the sample with composition (SiC) 0,88 (AlN) 0,12 is 3.5eV, and 4.24 eV for the (SiC) 0,36 (AlN) 0,64 solid solution. The photoluminescence spectra demonstrate the strong dependence of the spectra on composition x. The experimental results are in agreement with theory. These data demonstrate the optimization of optical properties for particular optoelectronic applications by varying the (SiC) 1-х (AlN) х composition.

Structure, Luminescence, and Application of a Robust Carbidonitride Blue Phosphor (Al1–xSixCxN1–x:Eu2+) for Near UV-LED Driven Solid State Lighting

“…It is roughly estimated as 5.04, 4.84, 4.78, 3.63, and 3.55 eV for x = 0.06, 0.1, 0.2, 0.3, and 0.4, respectively. This result agrees well with the literature data. , Dallaeva et al addressed the fact that the band gap of (SiC) 1– z (AlN) z reduced as the SiC content increased . Kurbanov et al reported that the band gap of the solid solution varied from 3.3 to 5.8 eV depending on the composition, and a direct-band was for the SiC content smaller than 0.4 .…”

“…This indicates that a small variation in the Si 3 N 4 amount would yield great changes in luminescence efficiency. On the other hand, a single solid solution between AlN and SiC (2H) can be formed in a wide range due to their equivalent crystal structure. , This option therefore not only solves the problem arising from the use of Si 3 N 4 , but also develop a novel carbidonitride phosphor, i.e., Al 1– x Si x C x N 1– x :Eu 2+ .…”

Novel single-host Al1−xSixCxN1−x: Mn2+ white phosphors for field emission displays

“…Further increasing x = 0.1, a minor phase β-SiC is observed and its content increases with SiC increasing from 0.1 to 0.2. It implies that the solubility of SiC in AlN is x < 0.1, which is much less than the reported 76 mol % [38,39]. The difference in solubility may be ascribed to the different sintering process and Mn 2+ -doping.…”

“…The reasons come from two aspects: (1) there are great differences in crystal chemistry between Si 3 N 4 and AlN which make the solubility of Si 3 N 4 in AlN to be quite limited [16,17]. (2) it is prone to forming a single solid solution between AlN and SiC (2 H) in a wide range owing to their equivalent crystal structure [38,39]. Therefore, in the following work, we investigated the influence of SiC codoping on the structure, morphology and luminescence of AlN: Mn phosphors.…”

Analysis and Recommendations for Education Process of Experts in the Field of Scanning Probe Microscopy

“…The example from leaving nature is presented in Figure 1. Sometimes preliminary investigation of surface is necessary to fulfill conditions of SPM measurements [24][25][26][27][28]. Observation of the surface by optical microscopy usually helps to estimate the area of interest for further SPM study.…”