Silicon Carbide (SiC) D-MOS for grid-feeding solar-inverters

Stalter, Olivier; Burger, B.; Lehrmann, S.

doi:10.1109/epe.2007.4417654

Cited by 19 publications

(5 citation statements)

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“…After the reports on photovoltaic (PV) inverter equipped with SiC diodes [4] and SiC transistors [5], many works have been reported for the SiC power converters [6,7,8]. Interleaved direct current (DC)-DC converters built with SiC bipolar junction transistors (BJTs) and Schottky barrier diodes (SBDs) were reported [9,10].…”

Section: Reports On Photovoltaic Inverter With Sic Devicementioning

confidence: 99%

Dependence of electric power flow on solar radiation power in compact photovoltaic system containing SiC-based inverter with spherical Si solar cells

Ando

Oku

Yasuda

et al. 2020

Heliyon

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A photovoltaic power generation system suitable for mobile applications was developed. A SiC integrated converter with the maximum power point tracking circuit provided the smallest photovoltaic inverter in~200 W level. The SiC-based inverter exhibited a peak direct current (DC)-alternating current (AC) conversion efficiency higher than that of conventional Si inverters. A Li-ion laminated battery was mounted in the same housing as the inverter. The weight of entire system containing spherical Si solar cell panels was well below 6 kg. Continuous operation measurements of this system were carried out using four solar cell modules connected in parallel under irradiation by natural sunlight. The total inverter efficiencies under realistic operation conditions were slightly decreased compared with the DC-AC converter values because of loss by the maximum power point tracking device. Even under unstable weather conditions, the system provided power stability without ripples. The behaviors of the output powers of the solar cell, storage battery, and inverter modules were analyzed as a function of the solar radiation power density. The substantial efficiencies of the solar cell modules were dependent on the weather conditions and were approximately 10% on cloudy days. The present compact photovoltaic power generation system with SiC device and spherical Si solar cells is viable for sub kW-class inverter.

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Section: Reports On Photovoltaic Inverter With Sic Devicementioning

confidence: 99%

Dependence of electric power flow on solar radiation power in compact photovoltaic system containing SiC-based inverter with spherical Si solar cells

Ando

Oku

Yasuda

et al. 2020

Heliyon

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“…6 was built up in Ref. [18]. The lower semiconductor is switched with a pulse generator through an optocoupler, while the upper one is used as a free‐wheeling diode.…”

Section: Typical Applications Of Sic Power Devicesmentioning

confidence: 99%

Recent progress of SiC power devices and applications

Cao

Wang

2013

IEEJ Transactions Elec Engng

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Devices made of the wide‐bandgap semiconductor silicon carbide are capable of not only providing excellent performance for higher voltages, higher switching frequencies, higher junction temperatures, and higher power than silicon devices, but also leading to drastic reduction in system complexity, volume, and weight, as well as higher efficiency and better reliability of power electronics systems. The newly emerged technology has made rapid progress during the past decade, and we can expect even greater advantages and potential for energy savings and emission reduction in the coming years. In this paper, the research on SiC material and device technologies, the benefits, and some remaining issues are discussed. Recent progress (since 2007) in applications such as DC–DC, AC–DC, DC–AC, and AC–AC converters is discussed. Also, future applications and perspectives are analyzed. © 2013 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

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“…Among many applications, SiC semiconductors have been introduced in solar photovoltaic (PV) applications at a research level owing to their superior electrical and thermal properties compared to Si‐based semiconductors [1, 7]. For example, the first SiC diodes were introduced in PV inverters in 2001 [8] and in a series of products in 2005 [9, 10].…”

Section: Introductionmentioning

confidence: 99%

“…For example, the first SiC diodes were introduced in PV inverters in 2001 [8] and in a series of products in 2005 [9, 10]. The first application of SiC MOSFETs in a PV inverter was reported in 2007 [7]. Now, SiC MOSFETs, normally‐on/off junction field‐effect transistors (JFETs) and bipolar junction transistors (BJTs) are available in the market.…”

Section: Introductionmentioning

confidence: 99%

Practical implementation of a silicon carbide‐based 300 kHz, 1.2 kW hard‐switching boost‐converter and comparative thermal performance evaluation

Kim¹,

Jang²,

Agelidis³

2015

IET Power Electronics

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Field experience shows that the vast majority of solar photovoltaic (PV) energy system failures are related to the power conditioning system (PCS). Among the principal reliability issues of PV PCSs are thermal management and heat extraction mechanisms. The study considers practical implementation of a DC-DC boost converter as a solar PV pre-regulator in terms of thermal management, with comparative thermal performance evaluations of silicon carbide (SiC) semiconductors and silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs). Thermal performance evaluation of power semiconductors is based on a 1.2 kW DC-DC converter with: (i) various switching frequencies up to 300 kHz, in steps of 25 kHz; (ii) case temperatures from 25 to 150°C; and (iii) a natural convection heatsink with temperature increase rate of 0.5°C/ W. Simulation and experimental results verify that losses from SiC semiconductors are low compared with Si MOSFETs. This provides an opportunity for designing a pre-regulator DC-DC boost converter with less effort required for thermal management and enhanced reliability.

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Silicon Carbide (SiC) D-MOS for grid-feeding solar-inverters

Cited by 19 publications

References 0 publications

Dependence of electric power flow on solar radiation power in compact photovoltaic system containing SiC-based inverter with spherical Si solar cells

Dependence of electric power flow on solar radiation power in compact photovoltaic system containing SiC-based inverter with spherical Si solar cells

Recent progress of SiC power devices and applications

Practical implementation of a silicon carbide‐based 300 kHz, 1.2 kW hard‐switching boost‐converter and comparative thermal performance evaluation

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