2013
DOI: 10.1002/tee.21888
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Recent progress of SiC power devices and applications

Abstract: Devices made of the wide‐bandgap semiconductor silicon carbide are capable of not only providing excellent performance for higher voltages, higher switching frequencies, higher junction temperatures, and higher power than silicon devices, but also leading to drastic reduction in system complexity, volume, and weight, as well as higher efficiency and better reliability of power electronics systems. The newly emerged technology has made rapid progress during the past decade, and we can expect even greater advant… Show more

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Cited by 14 publications
(7 citation statements)
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References 17 publications
(16 reference statements)
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“…In addition, the SiC device has higher efficiencies for high power switching devices, which can operate at higher temperatures of ~600 °C without much change in their electrical properties compared with the Si devices (~200 °C). The SiC devices are one of the leading candidates of next generation power devices [5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the SiC device has higher efficiencies for high power switching devices, which can operate at higher temperatures of ~600 °C without much change in their electrical properties compared with the Si devices (~200 °C). The SiC devices are one of the leading candidates of next generation power devices [5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…After the reports on photovoltaic (PV) inverter equipped with SiC diodes [4] and SiC transistors [5], many works have been reported for the SiC power converters [6,7,8]. Interleaved direct current (DC)-DC converters built with SiC bipolar junction transistors (BJTs) and Schottky barrier diodes (SBDs) were reported [9,10].…”
Section: Reports On Photovoltaic Inverter With Sic Devicementioning
confidence: 99%
“…Since the first photovoltaic (PV) inverter using SiC diodes by Phlippen and Burger [4] and that using SiC transistors by Stalter et al [5], there have been considerable reports on the applications of SiC devices on power converters [6][7][8]. Concerning direct current (DC)-DC converters, interleaved boost converters built with SiC bipolar junction transistors (BJTs) and SiC Schottky barrier diodes (SBDs) were presented in [9] and [10], respectively.…”
Section: Introductionmentioning
confidence: 99%