Silicon Carbide Power Devices

Baliga, B. Jayant

doi:10.1142/9789812774521

Cited by 163 publications

(115 citation statements)

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“…Also, the U-MOSFETs have lower specific on-resistance because of the absence of the JFET region [1][2][3][4][5][6][7]. A smaller cell pitch reduces the specific onresistance contributions from the channel, accumulation, and drift regions [1,2].…”

Section: Introductionmentioning

confidence: 99%

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

Orouji

Jozi

Fathipour

2015

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

Orouji

Jozi

Fathipour

2015

Materials Science in Semiconductor Processing

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“…Highly resistive SiC is known to be crucial for the development and commercialization of high frequency RF SiC devices [1]. Semiinsulating (SI) SiC wafers are also preferred and extensively used as substrates for heteroepitaxial growth of GaN for microwave and radio frequency devices [2,3].…”

Section: Introductionmentioning

confidence: 99%

Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC

Krishnan

Kotamraju

Thirumalai

et al. 2011

Journal of Crystal Growth

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“…Many scientific papers have been published and comprehensive text books or book chapters have been written on SiC power devices and process technology and the readers are referred to [1][2][3][4] and references therein. The device technology is greatly dependent on substrate and epitaxial material quality and the number of detrimental defects.…”

Section: Introductionmentioning

confidence: 99%

High power devices in wide bandgap semiconductors

Östling

2011

Sci. China Inf. Sci.

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Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The main advantages of wide bandgap semiconductors are their very high critical electric field capability. From a power device perspective the high critical field strength can be used to design switching devices with much lower losses than conventional silicon based devices both for on-state losses and reduced switching losses. This paper will review the current state of the art in active switching device performance for both SiC and GaN devices. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available. This is encouraging since also bipolar devices now are attractive with good long term stability. SiC wafers still have a too high cost to be fully cost efficient. However, the SiC wafer roadmap looks very favorable as volume production takes off. For GaN materials the main application area is geared towards the lower power rating level up to 1 kV on mostly lateral FET designs. The cost advantage is interesting for GaN when grown on Si substrates to bring down costs.

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Silicon Carbide Power Devices

Cited by 163 publications

References 0 publications

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC

High power devices in wide bandgap semiconductors

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