Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC

Krishnan, Bharat; Kotamraju, Siva; Thirumalai, R.; Koshka, Yaroslav

doi:10.1016/j.jcrysgro.2011.02.010

Cited by 9 publications

(10 citation statements)

References 36 publications

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“…Thus, an alternative approach for obtaining SI substrates for various applications would be to use V-doped epitaxial layers grown on common and low-cost conducting substrates. SI epilayers of 4H-SiC have already been reported using V as a dopant on off-axis substrates 11,12 . However, off-axis epilayers cannot be used as a substrate for the growth of GaN-based HEMT structure because the growth of GaN-based HEMT structure is developed only for the Si-face of on-axis (0001) substrates.…”

Section: Several Methods For Achieving Si 4h-sic Bulk Substrates Havementioning

confidence: 99%

“…This indicates that these defects are somehow related to VTC. A high concentration of V in the gas phase has been shown to produce a high density of defects in the epilayers grown on off-axis substrates 12,16 . The defects were mainly originating in the basal plane and grow larger with the increasing thickness of epilayer.…”

Section: Influence Of V Concentration On Defects and Polytype Stabilimentioning

confidence: 99%

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CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Karhu

Sveinbjörnsson

Magnusson

et al. 2019

Journal of Applied Physics

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Highly resistive homoepitaxial layers of 4H-SiC have been grown on the Si-face of nominally on-axis, n-type substrates using chemical vapor deposition (CVD). Vanadium tetrachloride has been used as V-dopant which is responsible for the high resistivity of the epilayers. 100% 4H-polytype was reproduced in the epilayers using optimized on-axis growth process and the upper limit of Vanadium tetrachloride flow rate for achieving defect-free high resistivity homoepitaxial layers was established. A resistivity of more than 1x10 5 Ω-cm has been achieved in epilayers with a very low concentration of V (1x10 15 cm-3). Owing to the low concentration of V, superior epilayer structural quality was achieved compared to V-doped and standard high purity semi-insulating bulk grown material of similar resistivity. Epitaxial layers with varying Vanadium tetrachloride flow have also been grown to study the influence of V concentration on the polytype stability, structural quality and optical and electrical properties of epilayers. A clear correspondence has been observed in the flow-rates of Vanadium tetrachloride, the atomic concentration of V and electrical, optical and structural properties of epilayers.

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Section: Several Methods For Achieving Si 4h-sic Bulk Substrates Havementioning

confidence: 99%

Section: Influence Of V Concentration On Defects and Polytype Stabilimentioning

confidence: 99%

CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Karhu

Sveinbjörnsson

Magnusson

et al. 2019

Journal of Applied Physics

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“…Bulk 6H-SiC is grown by the well-known modified Lely process, but high concentrations of unintended dopants (N, Al, B) can be introduced. As a near parallel material, we grew 4H polytype epitaxially with precise control of V and minimal unintended dopants (N ~ 1–3 × 10 14 -cm −3 ) 30 , 31 .…”

Section: Resultsmentioning

confidence: 99%

Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties

Sampayan

Grivickas

Conway

et al. 2021

Sci Rep

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Unabated, worldwide trends in CO2 production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO2 mitigating benefits of a worldwide smart grid (~ 18% reduction for the United States alone). Even state-of-the-art SiC high voltage junction devices are inefficient because of slow transition times (~ 0.5-μs) and limited switching rates at high voltage (~ 20-kHz at ≥ 15-kV) resulting from the intrinsically limited charge carrier drift speed (< 2 × 107-cm-s−1). Slow transition times and limited switch rates waste energy through transition loss and hysteresis loss in external magnetic components. Bulk conduction devices, where carriers are generated and controlled nearly simultaneously throughout the device volume, minimize this loss. Such devices are possible using below bandgap excitation of semi-insulating (SI) SiC single crystals. We explored carrier dynamics with a 75-fs single wavelength pump/supercontinuum probe and a modified transient spectroscopy technique and also demonstrated a new class of efficient, high-speed, high-gain, bi-directional, optically-controlled transistor-like power device. At a performance level six times that of existing devices, for the first time we demonstrated prototype operation at multi-10s of kW and 20-kV, 125-kHz in a bulk conduction transistor-like device using direct photon-carrier excitation with below bandgap light.

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“…Beside this, there are very little reports on the investigation of another foreign element to the classical CVD system. One can find few papers on V, Fe, Ti, W, and Nb incorporation [3][4][5][6][7]. Though, in most of the cases the elemental incorporation was either non intentional or in a non-controlled manner.…”

Section: Introductionmentioning

confidence: 99%

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

et al. 2014

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Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC

Cited by 9 publications

References 36 publications

CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition

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