Silicon carbide benefits and advantages for power electronics circuits and systems

Elasser, Ahmed; Chow, T. Paul

doi:10.1109/jproc.2002.1021562

Cited by 426 publications

(187 citation statements)

References 67 publications

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“…sapphire substrate are reported in Sect. 3.1, to demonstrate the basic performance of our HVPE system. The freestanding GaN substrates that we used had polished flat c-plane surfaces with a slight off-angle in the direction of the a-axis.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm−3, with a maximum mobility of 1150 cm2·V−1·s−1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm−3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

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Section: Experimental Methodsmentioning

confidence: 99%

“…[3][4][5] However, the present status of the development of GaN-based power devices lags behind that of SiC devices. Availabilities of single-crystal SiC substrates since the 1980s and of high-purity epitaxial layers of SiC since the 1990s have led to more-rapid development of SiC-power devices.…”

Section: Introductionmentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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“…SiC power devices have the potential to impact power density at all levels in the package-a reduction in the size and number of power devices, a reduction in the size and number of passives for filtering circuits, and a reduction in the volume of thermal management [1]. The advent of high voltage SiC power devices will eliminate the need to parallel a large number of power die.…”

Section: Requirements Of Silicon Carbide Packagingmentioning

confidence: 99%

“…SiC power devices have been predicted to have tremendous potential to be the next generation material in the semiconductor industry [1][2][3][19][20][21]. These devices have been shown to operate in extremely high ambient temperatures with very low degradation in performance [22].…”

Section: Trends In Wire Bonded Silicon Carbide Packagingmentioning

confidence: 99%

“…These have the benefits of enabling a high power density at high junction temperatures, coupled with faster switching speeds as compared with their silicon (Si) counterparts [1][2][3][4][5][6]. Thus far, silicon carbide (SiC) [1][2][3] and gallium nitride (GaN) [4][5][6] have been the materials of choice for most WBG modules. While GaN is the preferred choice in applications requiring <500 V, SiC excels in applications exceeding 900 V. SiC devices rated 900 V and above are available in chip sizes spanning just tens of square millimeters.…”

Section: Introductionmentioning

confidence: 99%

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High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Seal

Mantooth

2017

Energies

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This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.

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Physical Properties of Silicon Carbide

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

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Silicon carbide benefits and advantages for power electronics circuits and systems

Cited by 426 publications

References 67 publications

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Physical Properties of Silicon Carbide

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