1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers
DOI: 10.1109/isscc.1992.200496
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Silicon bipolar mixed-signal parameterized-cell array for wireless applications to 4 GHz

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Cited by 8 publications
(2 citation statements)
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“…A 1991 U.S. patent [42] awarded to Plessey Overseas Ltd. describes a cell for a semi-custom array that could be instantiated as an npn or pnp transistor, a resistor or a diode by use of an appropriate metalmask. Recent work in bipolar analog arrays has resulted in a cell-based array for wireless applications [43] in the GHz range. The array is composed of RF and digital cells that are parameterized and interconnected using a metal mask.…”
Section: Metal-mask Programmable Analog Arraysmentioning
confidence: 99%
“…A 1991 U.S. patent [42] awarded to Plessey Overseas Ltd. describes a cell for a semi-custom array that could be instantiated as an npn or pnp transistor, a resistor or a diode by use of an appropriate metalmask. Recent work in bipolar analog arrays has resulted in a cell-based array for wireless applications [43] in the GHz range. The array is composed of RF and digital cells that are parameterized and interconnected using a metal mask.…”
Section: Metal-mask Programmable Analog Arraysmentioning
confidence: 99%
“…The devices have peak fT and f , , of approximately 14 GHz and 20 GHz respectively. A detailed description of the capabilities of this array is currently being published [3]. …”
Section: Introductionmentioning
confidence: 99%