Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

Weber, Walter M.; Mikolajick, Thomas

doi:10.1088/1361-6633/aa56f0

Cited by 76 publications

(60 citation statements)

References 230 publications

(179 reference statements)

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“…Si NWires are key candidates for future VLSI devices in sub-14 nm technology nodes (Weber & Mikolajick, 2017). At [110] axis with {110} and {001} interfaces (i = 7, X 704 ), as shown in panel (c).…”

Section: Morphological Description Of Si Nanowiresmentioning

confidence: 99%

Analytical description of nanowires. I. Regular cross sections for zincblende and diamond structures

König

Smith

2019

Acta Crystallogr Sect B

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Semiconductor nanowires (NWires) experience stress and charge transfer from their environment and impurity atoms. In response, the environment of a NWire experiences a NWire stress response which may lead to propagated strain and a change in the shape and size of the NWire cross section. Here, geometric number series are deduced for zincblende‐ (zb‐) and diamond‐structured NWires of diameter dWire to obtain the numbers of NWire atoms NWire(dWire[i]), bonds between NWire atoms Nbnd(dWire[i]) and interface bonds NIF(dWire[i]) for six high‐symmetry zb NWires with the low‐index faceting that occurs frequently in both bottom‐up and top‐down approaches of NWire processing. Along with these primary parameters, the specific lengths of interface facets, the cross‐sectional widths and heights and the cross‐sectional areas are presented. The fundamental insights into NWire structures revealed here offer a universal gauge and thus could enable major advancements in data interpretation and understanding of all zb‐ and diamond‐structure‐based NWires. This statement is underpinned with results from the literature on cross‐section images from III–V core–shell NWire growth and on Si NWires undergoing self‐limiting oxidation and etching. The massive breakdown of impurity doping due to self‐purification is shown to occur for both Si NWires and Si nanocrystals (NCs) for a ratio of Nbnd/NWire = Nbnd/NNC = 1.94 ± 0.01 using published experimental data.

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Section: Morphological Description Of Si Nanowiresmentioning

confidence: 99%

Analytical description of nanowires. I. Regular cross sections for zincblende and diamond structures

König

Smith

2019

Acta Crystallogr Sect B

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“…[26,27] Early TFETs built on bulk Si suffered from poor on-state behavior because of the long tunneling length. He received his Ph.D. degree in physics from Wuhan University in 2009.…”

Section: Heterojunction Constructionmentioning

confidence: 99%

“…According to the Wentzel-Kramer-Brillouin (WKB) approximation, [26,27] the tunneling probabilities in TFETs can be significantly improved by reducing the bandgaps in the tunneling regions. According to the Wentzel-Kramer-Brillouin (WKB) approximation, [26,27] the tunneling probabilities in TFETs can be significantly improved by reducing the bandgaps in the tunneling regions.…”

Section: Brief Introduction To Band-to-band Tunneling Mechanismmentioning

confidence: 99%

“…To outperform conventional transistors, the primary request for TFET optimization is to boost their on‐state performance. According to the Wentzel–Kramer–Brillouin (WKB) approximation, the tunneling probabilities in TFETs can be significantly improved by reducing the bandgaps in the tunneling regions. On the other hand, small bandgaps will also enhance reverse hole injections from the CB of the drain to the VB of the channel at off‐state, degrading the TFETs' off‐state behaviors.…”

Section: Brief Introduction To Band‐to‐band Tunneling Mechanismmentioning

confidence: 99%

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Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Qin

Wang

et al. 2018

Adv Elect Materials

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Since the continuous scaling down of the transistor channel length, extraordinary improvement is achieved in the switching speed. However, the rising leakage current degrades the power consumption seriously. In this regard, reducing supply voltage might be the most effective method. This requirement can be fulfilled well by tunnel field‐effect transistors (TFETs), because carriers transport via a band‐to‐band tunneling manner in the TFETs. Relying on the special transport mechanism, the TFETs often require band structure modulations and steep interfaces without trap state, which are challenging for bulk materials. Therefore, these challenges have boosted TFET designs based on low‐dimensional materials ranging from Si/Ge nanowires to state‐of‐art van der Waals heterostructures. Here, the key concepts of the currently developed TFETs are studied from the aspects of structure, material, transportation characteristic, and mechanism. According to the heterojunction bonding types, they can be divided into lateral and vertical TFETs in general. Furthermore, other related transistors based on tunneling are also included. Emerging problems and promotion methods toward these TFETs are introduced with the assistance of simulations. The main goal is to introduce the frontiers of TFET explorations and provide readers with a perspective on how to realize TFET applications in the future.

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“…Charged molecular species approaching the surface influence the spatial distribution of charges around the wires and alter the surface potential in the semiconductor. The surface potential change will lead to a strong change in current when integrating the semiconductor nanowire into a field effect transistor device, because the channel can be depleted more efficiently compared to a bulk semiconductor [19]. Since the conventional receptors; i.e., antibodies-are relatively large and Debye length is strongly dependent on the ionic strength of the environment [20], an efficient sensing requires altering at least one of these parameters.…”

Section: Introductionmentioning

confidence: 99%

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

et al. 2018

Self Cite

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Abstract:We present a biosensor chip with integrated large area silicon nanowire-based field effect transistors (FET) for human α-thrombin detection and propose to implement the hysteresis width of the FET transfer curve as a reliable parameter to quantify the concentration of biomolecules in the solution. We further compare our results to conventional surface potential based measurements and demonstrate that both parameters distinctly respond at a different analyte concentration range. A combination of the two approaches would provide broader possibilities for detecting biomolecules that are present in a sample with highly variable concentrations, or distinct biomolecules that can be found at very different levels. Finally, we qualitatively discuss the physical and chemical origin of the hysteresis signal and associate it with the polarization of thrombin molecules upon binding to the receptor at the nanowire surface.

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Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

Cited by 76 publications

References 230 publications

Analytical description of nanowires. I. Regular cross sections for zincblende and diamond structures

Analytical description of nanowires. I. Regular cross sections for zincblende and diamond structures

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

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