2018
DOI: 10.3390/app8060950
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Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

Abstract: Abstract:We present a biosensor chip with integrated large area silicon nanowire-based field effect transistors (FET) for human α-thrombin detection and propose to implement the hysteresis width of the FET transfer curve as a reliable parameter to quantify the concentration of biomolecules in the solution. We further compare our results to conventional surface potential based measurements and demonstrate that both parameters distinctly respond at a different analyte concentration range. A combination of the tw… Show more

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Cited by 21 publications
(28 citation statements)
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References 63 publications
(77 reference statements)
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“…[14,37] This distance becomes shorter with the increase in the ionic strength. Particularly in FETs, the response depends on the charge sign of the analyte molecule and the transistor type (n or p).…”
Section: Sensing Biomolecules: Toward Miniaturized Point-of-care Diagmentioning
confidence: 94%
See 4 more Smart Citations
“…[14,37] This distance becomes shorter with the increase in the ionic strength. Particularly in FETs, the response depends on the charge sign of the analyte molecule and the transistor type (n or p).…”
Section: Sensing Biomolecules: Toward Miniaturized Point-of-care Diagmentioning
confidence: 94%
“…Adapted with permission. [37] Copyright 2018, Multidisciplinary Digital Publishing Institute (MDPI). d) Measurement improvement using antibody fragments and low receptor density.…”
Section: Alternative Measurement Modesmentioning
confidence: 99%
See 3 more Smart Citations