Signal margin test to identify process sensitivities relevant to DRAM reliability and functionality at low temperatures

Abstract

With high aspect ratio, tight spacing, small linewidtlis, and low supply voltages associated with the scaling of the DRAM cell, signal for thc sense amplificr becomcs wcaker for each new DRAM goneraiion. Wc have devdopcd a sigtial margin testing methodology capablc of idenlifying process sensitivities relevant to DRAM functionality and rcliabiliLy at low temperaturcs. This paper describcs the test methodology and discusses thc bciicfits derivcd from applying this mcthod to 256M DRAM product developmcnt. 6 99 IRW FINAL REPORT 0-78D3~5648~1~B01$10.00 "1B80 IEEE