With high aspect ratio, tight spacing, small linewidtlis, and low supply voltages associated with the scaling of the DRAM cell, signal for thc sense amplificr becomcs wcaker for each new DRAM goneraiion. Wc have devdopcd a sigtial margin testing methodology capablc of idenlifying process sensitivities relevant to DRAM functionality and rcliabiliLy at low temperaturcs. This paper describcs the test methodology and discusses thc bciicfits derivcd from applying this mcthod to 256M DRAM product developmcnt. 6 99 IRW FINAL REPORT 0-78D3~5648~1~B01$10.00 "1B80 IEEE
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.