Signal integrity analysis for coupled SWCNT interconnects using stable recursive algorithm

Venkataiah, C.; Satyaprasad, K.; Prasad, T. Jayachandra

doi:10.1016/j.mejo.2018.01.012

Cited by 18 publications

(13 citation statements)

References 23 publications

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“…stress and strain, of RNA nanotubes. We approach the modeling strategy of RNA nanotubes based on the ideas similar to the modeling of carbon nanotubes and several other nanorods (Cheng et al 2009b;Tserpes and Papanikos 2005;Odijk 1986;Kohji et al 1978;Tashiro et al 1978;Badu and Melnik 2017b;Fatehiboroujeni et al 2018;Fang et al 2013;Gupta and Kumar 2018;Fatehiboroujeni et al 2018;Maghsoodi and Perkins 2018;Kumar et al 2016;Schmidt et al 2015;Gupta and Kumar 2017;Venkataiah et al 2018;Badu and Melnik 2017a).…”

Section: Introductionmentioning

confidence: 99%

Atomistic to continuum model for studying mechanical properties of RNA nanotubes

Badu

Prabhakar

Melnik

et al. 2020

Computer Methods in Biomechanics and Biomedical Engineering

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With rapid advancements in the emerging field of RNA nanotechnology, its current and potential applications, new important problems arise in our quest to better understand properties of RNA nanocomplexes. In this paper, our focus is on the modeling of RNA nanotubes which are important for many biological processes. These RNA complexes are also important for human beings, with their theurapeutical and biomedical applications discussed vigorously in the literature over the recent years. Here, we develop a continuum model of RNA nanotubes, originally obtained from self assembly of RNA building blocks in the molecular dynamics simulation. Based on the finite element method, we calculate the elastic properties of these nanostructures and provide a relationship between stress and strain induced in the RNA nanotube. We also analyze the variations in the displacement vector along the assembly axis for RNA nanotubes of different sizes. In particular, we show that oscillations in the amplitudes of strains and displacements significantly differ for such RNA nanotubes. These findings are discussed in the context of atomistic simulations and experimental results in this field.

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Section: Introductionmentioning

confidence: 99%

Atomistic to continuum model for studying mechanical properties of RNA nanotubes

Badu

Prabhakar

Melnik

et al. 2020

Computer Methods in Biomechanics and Biomedical Engineering

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“…Because of the high mobility of electrons movement near ballistic transport and high driving capacity and smaller area, the CNTFETs are become promising alternate for CMOS technology especially when the device scaled at nanometer range. The authors [21][22][23][24][25][26] revealed that CNTFET outperforms compared to CMOS for both circuits and transmission lines. The positive feedback logic shown superior performance in the design of BCAM cells and other circuits needed to realize the BCAM array such as priority encoder, decoder and other logic gates [27,28].…”

Section: Fig1 General 4x4 Bcam Arraymentioning

confidence: 99%

Design and Performance Analysis of Low Power High Speed 4x4 CNTFET Binary Content Addressable Memory Array

Gangadhar*,

Babulu

2019

IJEAT

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In this paper, Carbon Nanotube Field Effect Transistor (CNTFET) based Binary Content Addressable Memory (BCAM) array is presented. The CAM array comprises of address decoders, encoders, data drivers and BCAM cells. Performance analysis is carried for 4X4 BCAM array. Each BCAM cell is designed based on adiabatic logic with optimum CNTFET parameter for low power and high speed applications. The performance of proposed BCAM array is analyzed for average power, peak power and search delay. The proposed CNTFET based BCAM array show improvement in the performance compared to that of complementary metal oxide semiconductor (CMOS) based BCAM array. The average power and peak power of the proposed 4x4 CNTFET BCAM array are in the range of micro watt (µW) while it is in the range of milli watt (mW) for CMOS based BCAM array. The search delay of the proposed 4X4 CNTFET BCAM array is improved by 32.3% compared to that of CMOS based BCAM array. All simulations are conducted for both CNTFET and CMOS based BCAM cells, BCAM array in HSPICE at 32 nm technology.

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“…Hence, increasing the amount of power dissipation integrated circuits. As improvement in technology or scaling will leads to have also provides in a significant may increase in parasitic in interconnects wires [6][7][8][9][10][11][12]. Inductive effect and capacitive coupling effect gives interconnect wire coupling crosstalk significant and cause many signal integrity problems.…”

Section: Introductionmentioning

confidence: 99%

Crosstalk Analysis of On-chip VLSI Interconnects

Jayamma¹,

Ramanjaneyulu²,

Sathish³

et al. 2022

International Journal of Emerging Research in Engineering, Science, and Management

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In this paper dynamic crosstalk is analyzed for coupled on-chip VLSI interconnects in different conditions. The proposed work has taken the MOS transistor analytical expressions. In this work, calculated the transition delays and different timings of the interconnect aggressor and interconnect victim drivers for in-phase switching and out-of-phase switching. All the calculated results are compared with simulations in SPICE. The average error in the transmission delay using SPICE is 2.02 and 3.274% for the interconnect aggressor and interconnect victim buffers for in phase switching, respectively. The average errors in the same are 2.3 and 1.87% for out phase switching event.

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Signal integrity analysis for coupled SWCNT interconnects using stable recursive algorithm

Cited by 18 publications

References 23 publications

Atomistic to continuum model for studying mechanical properties of RNA nanotubes

Atomistic to continuum model for studying mechanical properties of RNA nanotubes

Design and Performance Analysis of Low Power High Speed 4x4 CNTFET Binary Content Addressable Memory Array

Crosstalk Analysis of On-chip VLSI Interconnects

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