SiGe-power amplifiers in flipchip and packaged technology

Bischof, W.; Alles, Michael L.; Gerlach, S.; Kruck, A.; Schüppen, A.; Sinderhauf, J.; Wassener, H.-J.

doi:10.1109/rfic.2001.935636

Cited by 11 publications

(3 citation statements)

References 10 publications

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“…Dual-band impedance transformation networks have been investigated mainly for low-noise amplifiers (LNA) [2]. For PAs, the published approaches use either separated signal paths [3, 4] or are based on discrete passives [5]. Dual-band impedance transformation networks are seldom applied for fully integrated PAs since they usually require more bulky inductors [6] which increases chip size and which makes them usually less efficient than an impedance transformation network for a single frequency.…”

Section: Introductionmentioning

confidence: 99%

Dual-band impedance transformation networks for integrated power amplifiers

Wolf

Joram

Schumann

et al. 2014

Int. J. Microw. Wireless Technol.

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This paper shows that the two most common impedance transformation networks for power amplifiers (PAs) can be designed to achieve optimum transformation at two frequencies. Hence, a larger bandwidth for the required impedance transformation ratio is achieved. A design procedure is proposed, which takes imperfections like losses into account. Furthermore, an analysis method is presented to estimate the maximum uncompressed output power of a PA with respect to frequency. Based on these results, a fully integrated PA with a dual-band impedance transformation network is designed and its functionality is proven by large signal measurement results. The amplifier covers the frequency band from 450 MHz to 1.2 GHz (3 dB bandwidth of the output power and efficiency), corresponding to a relative bandwidth of more than 100%. It delivers 23.7 dBm output power in the 1 dB compression point, having a power-added efficiency of 33%.

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Section: Introductionmentioning

confidence: 99%

Dual-band impedance transformation networks for integrated power amplifiers

Wolf

Joram

Schumann

et al. 2014

Int. J. Microw. Wireless Technol.

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“…Due to the significant self and mutual inductance of the wires and the real estate of the final die, this method is not suitable for a 5.8 GHz application. As summarized in Table I, another approach to reduce the lead inductance is a flip-chip approach [2]. However, it leads to a more complex thermal management scheme as well as increased PA package cost.…”

Section: Introductionmentioning

confidence: 99%

3D Integration Techniques Applied to SiGe Power Amplifiers

Malladi¹,

Joseph²,

Lindgren³

et al. 2008

ECS Trans.

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We describe a 0.35 µm SiGe BiCMOS technology that is optimized for power amplifier (PA) applications. The key feature of this technology is a novel low inductance ground to the package by method of through-silicon-via (TSV), offering a competitive solution for future multi-band / multi-mode PA integration. The tungsten filled, multi-finger, bar shaped TSV delivers over 75% reduction in inductance compared to a traditional wire bond, enabling higher frequency applications with roughly 20% die area reduction, and without compromising the technology reliability for use conditions in a low-cost plastic QFN package. In this paper we demonstrate the commercial feasibility of the TSV, its RF performance, and its usefulness in a demanding WiMAX PA application.

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“…The emittergrounding inductance is crucial for the single-ended RF PA. Since the Si-based technology has no low-parasitic via-hole process, special treatments such as flip-chip [5] or heavily-doped sinker [6] are used in the literatures. In this paper, double-bond-wires (at a single pad) are used to minimize the emitter inductive-degeneration effect.…”

Section: Measurement Resultsmentioning

confidence: 99%

High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control

Hua

Lai

Lin

et al.

RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency Integrated Circuits

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A high-linearity and temperature-insensitive 2,4 GHz power amplifier (PA) with dynamic-bias control is realized in a SiGe HBT technology with 0.9 pm emitter width. Due to the bias linearization, the PldB of 27 dBm is only 0.5 dB smaller than PSsr, which i s the record low to the best of our knowledge. With simple temperature-insensitive bias, the total current deviations from the room temperature are smaller than 6% and 10% at the linear Pa,, (24/20 dBm) for 802.1Ib and 802.11g, respectively at the test temperature from 0 "C to 85 'C. The integrated power detector has a wide dynamic range of 20 dB. The DC current can be reduced to 53 mA and the power-added-efficiency (PAE) can be enhanced up to 3 times at low Pa"* level under dynamic-bias control operation, and meanwhile the 802.11 blg linearity requirements are achieved. This design is most suitable for the future 802.11n application due to its high linearity.

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SiGe-power amplifiers in flipchip and packaged technology

Cited by 11 publications

References 10 publications

Dual-band impedance transformation networks for integrated power amplifiers

Dual-band impedance transformation networks for integrated power amplifiers

3D Integration Techniques Applied to SiGe Power Amplifiers

High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control

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