High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control

Abstract

A high-linearity and temperature-insensitive 2,4 GHz power amplifier (PA) with dynamic-bias control is realized in a SiGe HBT technology with 0.9 pm emitter width. Due to the bias linearization, the PldB of 27 dBm is only 0.5 dB smaller than PSsr, which i s the record low to the best of our knowledge. With simple temperature-insensitive bias, the total current deviations from the room temperature are smaller than 6% and 10% at the linear Pa,, (24/20 dBm) for 802.1Ib and 802.11g, respectively at the test temperature from 0 "C to 85 'C. The integrated power detector has a wide dynamic range of 20 dB. The DC current can be reduced to 53 mA and the power-added-efficiency (PAE) can be enhanced up to 3 times at low Pa"* level under dynamic-bias control operation, and meanwhile the 802.11 blg linearity requirements are achieved. This design is most suitable for the future 802.11n application due to its high linearity.