Sidewall depletion in nano-patterned LAO/STO heterostructures

Minhas, Mohsin; Blaschek, H. H.; Heyroth, Frank; Schmidt, G.

doi:10.48550/arxiv.1502.06382

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“…Among these methods, the one reported in ref. 9 , based on the use of electron beam lithography in combination with reactive ion etching, allows fabrication of LaAlO 3 /SrTiO 3 channels of width down to 100 nm and can be directly extended to optical lithography, thus being easily transferred to industrial patterning processes. The study of ref.…”

Section: Introductionmentioning

confidence: 99%

Nanopatterning process based on epitaxial masking for the fabrication of electronic and spintronic devices made of La0.67Sr0.33MnO3/LaAlO3/SrTiO3 heterostructures with in situ interfaces

Telesio

Pellegrino

Pallecchi

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The fabrication of oxide electronics devices is presently hindered by the lack of standardized and well established patterning procedures, applicable down to the nanoscale. In this work, we propose a procedure to obtain patterns with resolution around 100nm on (La,Sr)MnO 3 /LaAlO 3 /SrTiO 3 heterostructures. Our method is based on a multi-step technique, which includes wet and dry etching, epitaxial masking and e-beam lithography. Our procedure is devised to define independent patterns on the interfacial two dimensional electron gas and on the metallic top electrode, while preserving an allin-situ approach for the heterostructure growth. We show results on nanoscale devices based on (La,Sr)MnO 3 /LaAlO 3 /SrTiO 3 , suitable for oxide spintronics applications.

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Section: Introductionmentioning

confidence: 99%