Side-gate graphene field-effect transistors with high transconductance

Hähnlein, Bernd; Händel, Benjamin; Pezoldt, Jörg; Toepfer, Hannes; Granzner, Ralf; Schwierz, Frank

doi:10.1063/1.4748112

Cited by 36 publications

(31 citation statements)

References 20 publications

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“…, normalized by channel width [8], for sideand back-gate. The transconductance is a useful parameter in the saturation regime, when a FET is used as an amplifier [39].…”

Section: Resultsmentioning

confidence: 99%

“…Extra control was then added by including a top-gate, at the cost of process complexity and increased risk of device failure due to the top dielectric deposition [2][3][4][5]. The use of side-gate(s) to limit interaction with dielectrics and avoid mobility degradation emerged soon after with side-gates formed by graphene [6][7][8][9][10] or metal leads [11]. All-graphene devices, where graphene is used both as channel and side-gate, offer the further advantage of the fabrication of self-aligned structures in a single lithographic step, with optimized gate to source/drain overlapping.…”

Section: Introductionmentioning

confidence: 99%

“…To date, research on side-gated devices has been dealing with the effect of the gate on the electrical transport properties of the graphene channel in terms of the modulation of conductance [6][7]11], penetration of the transversal field in the channel [6], transconductance [8]. Different geometries with single and dual side-gate and various critical dimensions have been considered [9], and some progress has been made towards a process suitable for integration in the existing Si technology [10].…”

Section: Introductionmentioning

confidence: 99%

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Leakage and field emission in side-gate graphene field effect transistors

Bartolomeo

Giubileo

Iemmo

et al. 2016

Applied Physics Letters

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We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices

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“…, normalized by channel width [8], for sideand back-gate. The transconductance is a useful parameter in the saturation regime, when a FET is used as an amplifier [39].…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Leakage and field emission in side-gate graphene field effect transistors

Bartolomeo

Giubileo

Iemmo

et al. 2016

Applied Physics Letters

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“…As magnetic fields are exerted, gap shrinkage happens and the GNR eventually undergoes a semiconductor-metal transition during the formation of Landau subbands. The gap modulation opens the possibility for the design of side-gated GNR-fieldeffect devices, [97][98][99][100][101][102][103] where the side gate offering a better alternative to top-gating scheme will prevent dielectric breakdown [104][105][106][107][108][109] and electrical hysteresis caused by top-gate dielectrics. [110][111][112][113][114][115][116][117][118][119][120][121] The geometric configurations and external fields not only modulate the gap but also alter the energy spacings among subbands.…”

Section: Monolayer Systemsmentioning

confidence: 99%

“…The electric-field-induced rich spectra can be explored via the optical experiments [141][142][143][144]282] on the side-gated GNRs. [97][98][99][100][101][102][103] Electric field can enrich absorption spectra by competing with the lateral confinement. [84] With the increase of electric field, the prominent peaks of the edge-dependent selection rules are lowered, and the subpeaks satisfying the extra selection rules come to exist.…”

Section: Effects Of Electric Fieldsmentioning

confidence: 99%

Electronic and optical properties of graphene nanoribbons in external fields

Chung

Chang

Lin

et al. 2016

Phys. Chem. Chem. Phys.

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A review work is done for the electronic and optical properties of graphene nanoribbons in magnetic, electric, composite, and modulated fields. Effects due to the lateral confinement, curvature, stacking, non-uniform subsystems and hybrid structures are taken into account. The special electronic properties, induced by complex competitions between external fields and geometric structures, include many one-dimensional parabolic subbands, standing waves, peculiar edge-localized states, width- and field-dependent energy gaps, magnetic-quantized quasi-Landau levels, curvature-induced oscillating Landau subbands, crossings and anti-crossings of quasi-Landau levels, coexistence and combination of energy spectra in layered structures, and various peak structures in the density of states. There exist diverse absorption spectra and different selection rules, covering edge-dependent selection rules, magneto-optical selection rule, splitting of the Landau absorption peaks, intragroup and intergroup Landau transitions, as well as coexistence of monolayer-like and bilayer-like Landau absorption spectra. Detailed comparisons are made between the theoretical calculations and experimental measurements. The predicted results, the parabolic subbands, edge-localized states, gap opening and modulation, and spatial distribution of Landau subbands, have been identified by various experimental measurements.

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Graphene Nanoribbons for Electronic Devices

et al. 2017

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Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types -graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that -in spite of the remarkable progress achieved during the past 10 yearsgraphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.

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Side-gate graphene field-effect transistors with high transconductance

Cited by 36 publications

References 20 publications

Leakage and field emission in side-gate graphene field effect transistors

Leakage and field emission in side-gate graphene field effect transistors

Electronic and optical properties of graphene nanoribbons in external fields

Graphene Nanoribbons for Electronic Devices

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