SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range

Bertuccio, G.; Casiraghi, R.; Gatti, E.; Maiocchi, D.; Nava, F.; Canali, C.; Cetronio, A.; Lanzieri, C.

doi:10.4028/www.scientific.net/msf.433-436.941

Cited by 10 publications

(5 citation statements)

References 10 publications

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“…At present, the X-ray performance of prototype detectors is still relatively poor, with FWHM resolutions of 2.7 keV at 59.54 keV being reported (Bertuccio et al, 2001). However, recent measurements with small pixel detectors have achieved room temperature energy resolutions of 693 eV FWHM at 59.54 keV (Bertuccio et al, 2003).…”

Section: Present Detection Systemsmentioning

confidence: 99%

Semiconductor materials and radiation detection

Owens

2006

J Synchrotron Radiat

124

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While Si and Ge have become detection standards for X-and gamma-ray spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by one or more of their physical limitations; namely the need for ancillary cooling systems or bulky cryogenics, their modest stopping powers and radiation intolerance. Wide band gap compounds offer the ability to operate in a range of chemical, thermal and radiation environments, whilst still maintaining sub-keV spectral resolution at X-ray wavelengths. In addition, these materials encompass such a wide range of physical properties that it is technically feasible to engineer materials to specific applications. However, while compound materials are used routinely in the optical and infrared wavebands, their development at hard X-and gamma-ray wavelengths has been plagued by material and fabrication problems. In this paper we present an overview of suitable materials and review the current progress in producing X-and gamma-ray radiation detectors.

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Section: Present Detection Systemsmentioning

confidence: 99%

Semiconductor materials and radiation detection

Owens

2006

J Synchrotron Radiat

124

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“…In this field, Silicon Carbide plays an important role [1], being a material which present attractive characteristics and advantages to be employed in radiation detectors, such as the high efficiency in the ultraviolet region (UV, λ = 120-400 nm), the short rise time, due to the fast charge mobility and the very low leakage current. The higher bandgap (3.26 eV) compared to the Silicon one (1.12 eV) allows to be "blind" to the visible light [2,3], decreasing the noise to the visible light emission, particularly useful for applications in plasma diagnostics [4,5]. Moreover, the higher electron mobility allows a high count rate frequency, while the low reverse current (two-three orders of magnitude lower with respect to silicon, at room temperature) and the high displacement energy of 25 eV with respect to the Si (of 15 eV) make such detectors resistant to the high temperatures [6] and to the radiation doses [7].…”

mentioning

confidence: 99%

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Torrisi

Wachulak²,

Fiedorowicz

et al. 2020

J. Inst.

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A: Silicon carbide detectors were employed to characterize the plasma produced by laser interaction with a double stream gas-puff target source. A 10 Hz repetition rate Nd:YAG laser (1064 nm wavelength, 0.69 J pulse energy and 3 ns pulse duration) was employed to irradiate different gas-puff targets (Argon, Xenon and Sulfur hexafluoride), at different pressures (1-10 bar), emitting plasma radiation in different wavelength ranges (ultraviolet, extreme ultraviolet and soft X-rays). The emission produced by the laser radiation was properly filtered (employing Titanium, Aluminium, Zirconium and Calcium fluoride filters), to narrow down the broad-band emission of the generated plasma. The SiC detectors' signals were compared with a calibrated traditional silicon detector evaluating their differences, i.e. taking into account the plasma stability, the time trace profile and the characteristics of the gas-puff target source. The obtained results, which will be presented and discussed, allow to improve the geometry and configuration of the SiC detectors avoiding saturation and charge recombination effects and getting a better proportionality to the energy and fluence of the detected radiations. K: Detectors for UV, visible and IR photons; Plasma generation (laser-produced, RF, x ray-produced); Radiation monitoring; X-ray detectors 1Corresponding author.

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“…The electrical characterization of the device is described in details in [7]: the rectifying junctions exhibit 1.2 eV Schottky barrier height and reverse current density lower than 1 nA cm -2 at 100 V bias voltage.…”

Section: Methodsmentioning

confidence: 99%

Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

Vittone

Pastuović

Olivero

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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The acro indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices.Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers published so far in peer-reviewed journals. Its success stems from the valuable information IBIC can provide on charge transport phenomena occurring in finished devices, not easily obtainable by other analytical techniques. However, IBIC analysis requires a robust theoretical background to correctly interpret experimental data. In order to illustrate the importance of using a rigorous mathematical formalism, we present in this paper a benchmark IBIC experiment aimed * Corresponding author: e-mail: vittone@to.infn.it, Phone: +00 39 0116707371, Fax: +00 39 0116691104 2 and to provide an example of the analytical capability of IBIC to characterize semiconductor devices.

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SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range

Cited by 10 publications

References 10 publications

Semiconductor materials and radiation detection

Semiconductor materials and radiation detection

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

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