Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

Vittone, E.; Pastuović, Željko; Olivero, P.; Manfredotti, C.; Jakšić, Milko; Giudice, A. Lo; Fizzotti, F.; Colombo, Elisabetta

doi:10.1016/j.nimb.2007.12.083

Cited by 26 publications

(17 citation statements)

References 18 publications

(20 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The 2-dimensional electrostatic model in fig. 1 was used as input; mobility, saturation velocity and lifetime for both carrier species (μ n = 2200 The CCE map was then obtained by the FEM implementation of the adjoint equation method [16,24]. The method allows to evaluate the CCE as a function of the electron-hole pair generation position through the solution of one differential equation for each carrier species, in the form of a stationary drift-diffusion equation.…”

mentioning

confidence: 99%

“…The method allows to evaluate the CCE as a function of the electron-hole pair generation position through the solution of one differential equation for each carrier species, in the form of a stationary drift-diffusion equation. Such a numerical method allows for a fast and accurate simulation of the detector response to ionizing radiation [24]. The result, shown in fig.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

Forneris¹,

Grilj

Jakšić

et al. 2013

EPL

View full text Add to dashboard Cite

-In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers' transport properties of the device. The resulting chargesharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of the device to ionizing radiation. This latter effect has recently attracted attention in commonly used detector materials, but different interpretations have been suggested, depending on the material, the geometry of the device and the nature of the ionizing radiation. In this letter, we report on the investigation in the formation of anomalous polarity pulses in a multi-electrode diamond detector with buried graphitic electrodes. In particular, we propose a purely electrostatic model based on the Shockley-Ramo-Gunn theory, providing a satisfactory description of anomalous pulses observed in charge collection efficiency maps measured by means of Ion Beam Induced Charge (IBIC) microscopy, and suitable for a general application in multielectrode devices and detectors.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

Forneris¹,

Grilj

Jakšić

et al. 2013

EPL

View full text Add to dashboard Cite

show abstract

“…In previous papers [1][2][3] we presented the mathematical formalism adopted to interpret IBIC experiment on the basis of a solid and rigorous theory founded on the basic laws of electrostatics [4,5]. The algorithm is based on the solution of the adjoint continuity equations for holes and electrons [6] and allows charge collection efficiency maps to be obtained with reduced computational efforts.…”

Section: Introductionmentioning

confidence: 99%

“…In order to validate this theoretical approach, several benchmark experiments were recently carried out at the Ruder Bošković Institute (RBI) in Zagreb (HR) on 4H-SiC Schottky diodes [1]. Its electronic features and radiation hardness, combined with a well established process to fabricate nuclear detectors [7], make 4H-SiC an ideal material to perform such IBIC experiments.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Charge collection efficiency mapping of interdigitated 4H–SiC detectors

Vittone

Skukan

Pastuović

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

Self Cite

View full text Add to dashboard Cite

a b s t r a c tThe Ion Beam Induced Charge (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side.IBIC maps were obtained using focused proton beams with energies of 0.9 and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact).These different experimental conditions have been modeled using a two-dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent agreement between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.

show abstract

Radiation Effects Microscopy

Lohstroh

2012

Characterization of Materials

View full text Add to dashboard Cite

Radiation effect microscopy (REM) describes two related areas of research that are used to study semiconductor materials, devices and the effect of ionizing radiation on their electronic properties and performance. First, ion beam induced currents (IBIC) are studied in an imaging mode and/or second the effect of the ion impact on the logic state of microelectronic components is investigated as a function of position of the incident ion (single event effect (SEE) imaging). This article reviews the most important developments and achievements of the technique during the last decade in terms of hardware and analysis. Several laboratories have developed dedicated data acquisition systems that allow the time resolved current or integrated current pulses to be digitized and the acquired waveforms to be analyzed offline. The time resolved data has improved the type of information that can be gained to include charge carrier drift velocities, diffusion effects and subsequently carrier lifetimes on nanosecond timescales. Computer modeling and simulations have been demonstrated to be very successful in describing the experimental data and will be increasingly applied to more complex device structures. Some laboratories have implemented temperature control to study temperature activated charge carrier re‐emission of defect levels and reduced temperatures can also be used to improve signal to noise. Currently, most common are wide band gap materials and semiconductor diodes or related devices as well as Silicon and SiGe based microelectronic chips, but there are indications that the application of REM might broaden in the future.

show abstract

Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

Cited by 26 publications

References 18 publications

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector

Charge collection efficiency mapping of interdigitated 4H–SiC detectors

Radiation Effects Microscopy

Contact Info

Product

Resources

About