Charge collection efficiency mapping of interdigitated 4H–SiC detectors

Vittone, E.; Skukan, Natko; Pastuović, Željko; Olivero, P.; Jakšić, Milko

doi:10.1016/j.nimb.2009.03.054

Cited by 9 publications

(3 citation statements)

References 11 publications

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“…From the full width at half maximum (FWHM) of the Gaussian fit of the derivative of the experimental data a strip broadening of 4.3 µm was calculated, with a clear broadening with respect to the intrinsic vertical size of the micro-focused XR beam (2.6 µm). This effect is due both to the lateral diffusion of minority photogenerated carriers towards the depleted region and to the non-uniformity of the electric-field distribution at the edge of the metal strip, as previously observed in ion-beam-induced charge (IBIC) maps on similar multi-electrode structures [15]. The smoothing of pixel sensitivity from the plateau behaviour does not occur entirely outside the metal strip but also partially extends underneath the electrode, as clearly indicated by the position of the electrode edge reported in fig.…”

mentioning

confidence: 56%

Multistrip synthetic single-crystal-diamond photodiode based on a p-type/intrinsic/Schottky metal transverse configuration

Ciancaglioni¹,

Marinelli²,

Prestopino³

et al. 2011

EPL

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A synthetic multistrip single-crystal-diamond detector based on a p-type/intrinsic diamond/Schottky metal transverse configuration, operating at zero-bias voltage, was developed. The device was characterized at the Diamond Light Source synchrotron in Harwell (UK) under monochromatic high-flux X-ray beams from 6 to 20 keV and a micro-focused 10 keV beam with a spot size of ∼3 µm. No significant pixel-to-pixel variation of both spectral responsivity and time response, high spatial resolution and good signal uniformity along each strip were found, suggesting the tested device structure as a promising sensor for X-ray and UV radiation imaging.

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mentioning

confidence: 56%

Multistrip synthetic single-crystal-diamond photodiode based on a p-type/intrinsic/Schottky metal transverse configuration

Ciancaglioni¹,

Marinelli²,

Prestopino³

et al. 2011

EPL

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“…Highquality large-area x-ray detectors based on SiC Schottky diodes, and high-energy particle (alpha and beta particles) detectors have been demonstrated. The particle detectors are based on the interaction between the charges of the incident particles and the orbital electrons of the absorber atoms (e.g., SiC) [15][16][17]. The operation of conventional radiation detectors, which are generally based on Ge or Si as the absorber atoms, is limited by the radiation damage threshold and thermal stability of the absorber material.…”

Section: Introductionmentioning

confidence: 99%

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

2011

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An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30 eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21 μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21 μm wavelength.

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“…The primary questions for charge readout of SiC are whether complete charge collection is achievable in monolithic, insulating samples, and whether charge collection varies across polytypes. While full charge collection for the 4H polytype has been demonstrated [61], detailed studies of charge collection efficiency suggest that semiinsulating samples have a fairly limited charge diffusion length at room temperature [62]. In Ref.…”

Section: Charge Collectionmentioning

confidence: 99%

SiC Detectors for Sub-GeV Dark Matter

Griffin,

Hochberg,

Inzani

et al. 2020

Preprint

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We propose the use of silicon carbide (SiC) for direct detection of sub-GeV dark matter. SiC has properties similar to both silicon and diamond, but has two key advantages: (i) it is a polar semiconductor which allows sensitivity to a broader range of dark matter candidates; and (ii) it exists in many stable polymorphs with varying physical properties, and hence has tunable sensitivity to various dark matter models. We show that SiC is an excellent target to search for electron, nuclear and phonon excitations from scattering of dark matter down to 10 keV in mass, as well as for absorption processes of dark matter down to 10 meV in mass. Combined with its widespread use as an alternative to silicon in other detector technologies and its availability compared to diamond, our results demonstrate that SiC holds much promise as a novel dark matter detector.

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Charge collection efficiency mapping of interdigitated 4H–SiC detectors

Cited by 9 publications

References 11 publications

Multistrip synthetic single-crystal-diamond photodiode based on a p-type/intrinsic/Schottky metal transverse configuration

Multistrip synthetic single-crystal-diamond photodiode based on a p-type/intrinsic/Schottky metal transverse configuration

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector

SiC Detectors for Sub-GeV Dark Matter

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