2011
DOI: 10.1209/0295-5075/94/28004
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Multistrip synthetic single-crystal-diamond photodiode based on a p-type/intrinsic/Schottky metal transverse configuration

Abstract: A synthetic multistrip single-crystal-diamond detector based on a p-type/intrinsic diamond/Schottky metal transverse configuration, operating at zero-bias voltage, was developed. The device was characterized at the Diamond Light Source synchrotron in Harwell (UK) under monochromatic high-flux X-ray beams from 6 to 20 keV and a micro-focused 10 keV beam with a spot size of ∼3 µm. No significant pixel-to-pixel variation of both spectral responsivity and time response, high spatial resolution and good signal unif… Show more

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Cited by 4 publications
(5 citation statements)
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“…The broadening at the edge of the electrodes is smaller than the size of the scanning step (10 mm). As observed in our previous work (Ciancaglioni et al, 2011), where a similar detector with multi-strip structures was tested under a microfocused X-ray beam, a strip broadening of 4 mm was measured, very close to the intrinsic size of the microfocused X-ray beam (about 3 mm). Based on this observation it might be possible to achieve a position sensi-tivity of the order of 1 mm by decreasing the gap separating the electrodes.…”
Section: Figuresupporting
confidence: 82%
“…The broadening at the edge of the electrodes is smaller than the size of the scanning step (10 mm). As observed in our previous work (Ciancaglioni et al, 2011), where a similar detector with multi-strip structures was tested under a microfocused X-ray beam, a strip broadening of 4 mm was measured, very close to the intrinsic size of the microfocused X-ray beam (about 3 mm). Based on this observation it might be possible to achieve a position sensi-tivity of the order of 1 mm by decreasing the gap separating the electrodes.…”
Section: Figuresupporting
confidence: 82%
“…Insulator layer can also be introduced in the MS structure to form MIS structured photodetector . When metal oxides are used as the insulators, we can obtain the typical complementary metal–oxide–semiconductor (CMOS) structure and the core component of coupled charge devices (CCDs), which is the fundamental element of modern digital cameras.…”
Section: Photodetectors Based On Hybrid Structuresmentioning
confidence: 99%
“…where J is current density, A Ã is the Richardson constant (96 A/cm 2 ) [39], k is the Boltzmann constant, T is temperature, and eΦ B is heterojunction barrier height. The estimated barrier height at the interface between WC and p-type diamond is in the range of 1.1-1.7 eV [29,30,33].…”
Section: Schottky Barriermentioning
confidence: 98%
“…5) were reported based on diamond [27][28][29]. Most reports of diamond Schottky barrier photodiodes concern the use of singlecrystal diamond substrates (HPHT-or CVD-diamond) and a p-type epitaxial layer [27,[30][31][32]. A homoepitaxial p-type diamond layer was MPCVD-grown on an intrinsic diamond substrate using CH 4 and H 2 gas mixtures.…”
Section: Diamond Schottky Barrier Photodiodesmentioning
confidence: 99%
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